Semiconductor Chip Peeling Method Using Chamfered Edge
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Solution Overview
Problem
Existing methods for measuring bonding strength between substrates, such as the blade insertion method, face difficulties in separating substrates with strong bonds or rejoining after separation, especially when using a single-edged blade.
Innovation Solution
A measuring method involving a blade with an acute angle is used to peel a semiconductor chip from a substrate by contacting the inclined surface of the blade with the chamfered outer edge of the chip, reducing friction and facilitating separation by making line contact, allowing for easier measurement of bonding strength based on the peeling length.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single-edged blade is used to insert into the bonding surface of two substrates, then the bonding strength can be measured based on peeling length, but it becomes difficult to separate substrates when the bond is strong or when substrates try to rejoin after separation
Solution Approach 1:
The blade is divided into two separate edges instead of using a single-edged blade. The first blade edge contacts the first substrate and the second blade edge contacts the second substrate, allowing independent action on each substrate and preventing the rejoining issue that occurs with single-edged blades
Solution Approach 2:
A dummy substrate is introduced as an intermediary component between the two substrates being measured. The dummy substrate has a predetermined bonding strength that is weaker than the bonds being measured, causing it to separate first and preventing the substrates from rejoining to each other during the peeling process
2Measurement precision
If the blade inserts along the main surface towards the outer edge of the semiconductor chip, then the bonding strength can be measured, but friction between the blade and chip surface increases making separation difficult
Solution Approach 1:
The outer edge of the semiconductor chip is chamfered to form a curved surface instead of a flat surface. This curved geometry reduces the contact area between the blade and the chip, thereby reducing friction and enabling easier separation while maintaining measurement accuracy
Solution Approach 2:
The chamfered curved surface is applied only at the outer edge of the semiconductor chip where the blade makes contact, while the rest of the chip surface remains unchanged. This localized modification reduces friction at the critical contact point without affecting the overall bonding characteristics
Data Source
AI summary
The present invention provides a measuring method for measuring a bonding strength, including: preparing a semiconductor chip bonded to a main surface of a substrate, the semiconductor chip having an outer edge chamfered to a curved surface that is a convex portion toward an outside; inserting a blade along the main surface towards the outer edge of the semiconductor chip and peeling the semiconductor chip from the substrate by bringing an inclined surface of the blade into contact with the curved surface of the outer edge of the semiconductor chip and applying force to the semiconductor chip in a direction away from the substrate; and measuring a bonding strength between the substrate and the semiconductor chip based on a length from a contact point where the blade contacts the semiconductor chip to a point where the semiconductor chip and the substrate are separated.