Semiconductor Chip Power Rear Connection Electrode Width Optimization
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Solution Overview
Problem
Semiconductor chips and packages face challenges in achieving high-density, efficient power supply and preventing electrical shorts due to the limitations in through electrode design and connection architecture, particularly in reducing resistance and maintaining pitch consistency for high input/output density and stable power delivery.
Innovation Solution
The design incorporates a semiconductor chip with a through electrode structure where a power rear connection electrode is wider than other electrodes, allowing simultaneous connection to multiple power through electrodes, and maintaining consistent pitch for rear and front connection electrodes, along with a dummy electrode for heat dissipation and process stability, enabling efficient power supply and preventing electrical shorts in high-density stacks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through via is used to connect semiconductor chips, then electrical connection between chips is achieved, but power supply resistance increases and power delivery stability deteriorates
Solution Approach 1:
Multiple power through electrodes are merged into a single power rear connection electrode on the rear surface, creating a consolidated power distribution node that reduces resistance and improves stability
Solution Approach 2:
The power connection architecture transitions from vertical through-electrode connections to a hybrid structure incorporating rear surface connection electrodes, adding a dimensional aspect to power distribution that reduces current path length and resistance
2Loss of energy
If connection electrodes are made wider to reduce resistance, then power delivery improves, but pitch consistency between rear and front connection electrodes is compromised
Solution Approach 1:
The connection electrode structure is segmented into distinct functional zones: power rear connection electrodes with larger widths for low resistance, and front connection electrodes with smaller widths for precise pitch matching, allowing each segment to optimize its specific function
Solution Approach 2:
Different regions of the electrode system are assigned different width characteristics: the power rear connection electrodes have larger widths localized to the rear surface for power consolidation, while front connection electrodes maintain smaller, consistent widths for precise alignment and pitch control
3Productivity
If high-density chip stacking is implemented, then I/O density increases, but electrical shorts between adjacent electrodes become more likely
Solution Approach 1:
Adjacent power rear connection electrodes are maintained at the same potential level through symmetrical arrangement and identical electrical characteristics, eliminating potential differences that could drive current leakage or electrical shorts between neighboring electrodes
Data Source
AI summary
A semiconductor chip includes a body portion with a front surface and a rear surface; a through electrode penetrating the body portion; a wiring portion that is disposed over the front surface of the body portion; a rear connection electrode that is disposed over the rear surface of the body portion; and a front connection electrode that is disposed over the wiring portion, wherein the rear connection electrode includes a power rear connection electrode that is simultaneously connected to two or more power through electrodes, and wherein a width of the power rear connection electrode is greater than a width of the front connection electrode.