Semiconductor Chip Cleaving with Pyramid Cut Regions
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Solution Overview
Problem
Mechanical cutting of semiconductor substrates often results in defects due to fracture and peeling of interlayer insulating films, which affects the quality and efficiency of semiconductor chip production.
Innovation Solution
A method involving the formation of multilayer metal patterns with a pyramid structure in the cut regions of the semiconductor substrate, guided by a laser-emitted modified layer to propagate cracks centrally, ensuring controlled fracture and minimizing film peeling during the cutting process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mechanical cutting by sawing blade is used, then cutting process is simple and fast, but cut surfaces fracture causing many defects
Solution Approach 1:
The patent replaces mechanical cutting with laser-induced thermal processing. A laser beam heats the semiconductor substrate along the cut line, causing localized melting and vaporization that separates the material without mechanical contact, thereby eliminating fracture and peeling defects while maintaining efficient cutting speed
Solution Approach 2:
The patent controls laser parameters (power, pulse duration, scanning speed) to precisely regulate the thermal process. By adjusting these parameters, the cutting depth, width, and quality are optimized to achieve clean cuts without damaging the crystal structure or causing defects
2Manufacturing precision
If laser cutting is used, then cut surface quality improves, but process complexity increases
Solution Approach 1:
The patent introduces a protective film as an intermediary layer between the laser beam and the semiconductor substrate. This film absorbs excess energy, prevents direct laser damage to the substrate surface, and facilitates controlled crack propagation along the desired cut line, simplifying the overall process while maintaining high precision
Solution Approach 2:
The patent applies a protective film to the semiconductor substrate before laser cutting. This preliminary action prepares the substrate by creating a controlled interface that guides the laser interaction, ensuring consistent cut quality and reducing the need for complex real-time process adjustments
3Manufacturing precision
If laser beam is emitted into semiconductor substrate, then precise cutting is achieved, but interlayer insulating films may peel
Solution Approach 1:
The protective film serves as a mediator that absorbs and distributes laser energy uniformly. This prevents localized overheating that would cause thermal stress and subsequent peeling of interlayer insulating films, while still enabling precise cutting through controlled thermal degradation of the protective film itself
Solution Approach 2:
The protective film acts as a cushioning layer that absorbs thermal energy before it reaches the sensitive interlayer insulating films. This beforehand protection prevents thermal shock and stress concentration that would otherwise cause film peeling during the laser cutting process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces defects, improves electrical characteristics, and enhances production efficiency by ensuring precise and directional cutting of semiconductor chips without film peeling, allowing for smoother cut surfaces and increased integration density.
Implementation Method 1
forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region
Implementation Method 2
polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer
Data Source
AI summary
Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.