Optoelectronic Semiconductor Chip Rear Contact Mirror Design
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Solution Overview
Problem
Existing optoelectronic semiconductor chips face limitations in achieving high luminous flux while maintaining compact dimensions and require bonding wires for electrical connections, which can absorb radiation and reduce efficiency.
Innovation Solution
An optoelectronic semiconductor chip design featuring a semiconductor layer sequence with multiple active regions stacked one above another, a mirror layer to reflect emitted radiation, and electrical contacts positioned away from the radiation exit surface to avoid absorption, allowing for increased luminous efficiency and surface-mountability without bonding wires.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If bonding wires are used for electrical connections on the radiation exit surface, then electrical connectivity is achieved, but radiation absorption increases and luminous efficiency decreases
Solution Approach 1:
The electrical contacts are extracted from the radiation exit surface and relocated to the rear side of the semiconductor chip, opposite to the radiation exit surface. This separation removes the harmful effect of contact absorption from the radiation path while preserving electrical connectivity function.
Solution Approach 2:
The electrical contacts are positioned in a different spatial dimension (rear side of the chip) rather than on the radiation exit surface. This dimensional relocation allows electrical connections to be made without interfering with the optical path, eliminating radiation absorption by contacts.
2Productivity
If multiple active regions are stacked one above another, then luminous flux increases, but device complexity increases
Solution Approach 1:
Multiple active regions are nested vertically one above another in a stacked configuration within the semiconductor layer sequence. This nesting approach increases luminous flux by combining multiple light-emitting regions while containing the complexity within a compact vertical structure.
Solution Approach 2:
Multiple active regions are merged into a single integrated semiconductor layer sequence, combining their light-emitting functions to achieve higher luminous flux. The merged structure shares common electrical contacts and substrate, managing complexity through integration.
3Ease of manufacture
If electrical contacts are arranged on the radiation exit surface, then electrical connection is simplified, but radiation absorption by contact layers increases
Solution Approach 1:
Electrical contacts are extracted from the radiation exit surface and repositioned on the rear side of the chip, eliminating their interference with radiation emission while maintaining ease of electrical connection through standardized mounting interfaces.
Solution Approach 2:
Instead of placing electrical contacts on the front radiation exit surface, the contacts are inverted to the opposite side of the chip. This inversion resolves the conflict between electrical connection simplicity and radiation emission intensity by separating the two functions spatially.
4Loss of energy
If a mirror layer is added to reflect radiation, then luminous efficiency increases, but device complexity increases
Solution Approach 1:
The mirror layer serves multiple functions: it reflects radiation back toward the exit surface to improve luminous efficiency, provides a mounting surface for electrical contacts on the rear side, and acts as a structural support layer. This multi-functionality justifies the added complexity by delivering multiple benefits from a single component.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances luminous efficiency by reflecting emitted radiation and eliminating radiation absorption by contacts, enabling higher luminous flux and surface-mountability, suitable for applications requiring high light intensity like projectors and headlights.
Implementation Method 1
a mirror layer is advantageously arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface. The electromagnetic radiation which is generated in the active regions and which is emitted in the direction of a rear side of the semiconductor chip, said rear side being situated opposite the radiation exit surface, is reflected toward the radiation exit surface by the mirror layer
Implementation Method 2
A radiation-emitting active layer is arranged between the first semiconductor region and the second semiconductor region. electromagnetic radiation generated in the at least two active regions
Data Source
AI summary
An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.