Semiconductor Chip Redistribution Layer for High Density Integration
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Solution Overview
Problem
The increasing demand for higher integration density and performance in semiconductor devices poses challenges in reducing process margins, particularly in photolithography, leading to difficulties in fabricating semiconductor devices with advanced package technologies such as vertically stacking semiconductor chips.
Innovation Solution
A semiconductor device with a redistribution layer is fabricated using a deposition and patterning process, featuring a semiconductor chip with a semiconductor substrate, integrated circuit, center and boundary pads, and insulating structures, allowing for efficient electrical connectivity and integration of multiple chips on a reduced area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process margin is reduced to achieve higher integration density, then manufacturing precision is improved, but fabrication difficulty increases
Solution Approach 1:
The patent segments the substrate into chip regions and scribe lane regions, with the scribe lane serving as a separate functional zone for pad placement and external connections. This segmentation allows the chip region to focus on high-density integration while the scribe lane handles I/O requirements, resolving the contradiction by distributing functional demands across separate zones rather than competing for the same space.
Solution Approach 2:
The patent utilizes vertical stacking of multiple semiconductor chips to achieve higher integration density by adding a third dimension (height/stacking direction) rather than merely increasing planar density. This dimensional transition allows multiple chips to be integrated in a compact footprint while maintaining standard photolithography process margins.
2Area of stationary object
If vertically stacking semiconductor chips is implemented to increase integration density, then area utilization is improved, but process complexity increases
Solution Approach 1:
The scribe lane region serves multiple functions: it provides boundary definition for chip separation, hosts boundary pads for external connections, and facilitates wire bonding access. This multi-functionality reduces the need for additional dedicated structures, thereby lowering overall process complexity while enabling vertical stacking for improved area utilization.
Solution Approach 2:
The patent introduces wire bonding as an intermediary connection method between stacked chips and external circuits. This intermediary approach simplifies the interconnection process compared to direct chip-to-chip integration, reducing process complexity while enabling efficient vertical stacking for compact area utilization.
3Quantity of substance
If more semiconductor chips are integrated on reduced area, then integration density is improved, but manufacturing cost increases
Solution Approach 1:
The patent merges the functions of pad placement, wire bonding access, and chip separation into the scribe lane region. By combining these functions in a single integrated zone rather than requiring separate dedicated areas, the design achieves high integration density without proportionally increasing manufacturing complexity and cost.
Solution Approach 2:
The scribe lane structure automatically provides boundary definition and pad access functionality without requiring additional processing steps or specialized equipment. The geometric configuration of the scribe lane itself serves as the organizing framework for multiple chips, enabling self-organized manufacturing that reduces cost while maintaining high integration density.
Data Source
AI summary
A semiconductor device includes a semiconductor chip substrate with a chip region and a scribe lane region, center and boundary pads respectively provided on the chip and scribe lane regions, a lower insulating structure provided on the chip region and the scribe lane region, a first conductive pattern including a contact portion, a conductive line portion, and a bonding pad portion, and an upper insulating structure defining first and second openings formed on the bonding pad portion and the boundary pad. The lower insulating structure includes a plurality of lower insulating layers, which are sequentially stacked on the substrate, and each of which is a silicon-containing inorganic layer.