Semiconductor Chip Reflective Elements Decoupling Efficiency
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Solution Overview
Problem
The production of LED semiconductor chips with high decoupling efficiency is typically complex and costly, necessitating a more cost-effective method to achieve high decoupling efficiency.
Innovation Solution
A semiconductor chip design featuring a carrier with a semiconductor body and a connecting layer, where reflective or scattering elements are formed between the carrier and the active region, and a transparent conductive oxide contact layer is used to reduce absorption losses and enhance radiation exit, along with a mirror layer to direct radiation and a structured surface to disrupt wave guidance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If complex manufacturing processes are used to achieve high decoupling efficiency, then the decoupling efficiency is improved, but the manufacturing cost increases
Solution Approach 1:
The patent replaces expensive and complex eutectic bonding processes with a simpler, more cost-effective connecting layer approach. The connecting layer uses conventional materials and processes that are already widely available in semiconductor manufacturing, eliminating the need for specialized eutectic bonding equipment and procedures while achieving sufficient mechanical and electrical connection between the semiconductor body and carrier.
Solution Approach 2:
The patent modifies the optical parameters of the connecting layer and contact layer by selecting materials with specific refractive indices that match or are close to the semiconductor body. This refractive index matching reduces optical reflection and absorption at interfaces, thereby improving decoupling efficiency without requiring complex optical structuring or additional optical layers.
2Strength
If eutectic bonding is used to fasten the semiconductor body to the carrier, then the connection strength is improved, but the manufacturing cost and process complexity increase
Solution Approach 1:
The patent replaces the expensive eutectic bonding process with a simpler connecting layer approach using conventional semiconductor materials. The connecting layer provides sufficient mechanical attachment and electrical connection for LED operation without requiring the complex thermal and mechanical processing of eutectic bonding, thereby reducing manufacturing cost and process complexity while maintaining adequate connection strength.
Solution Approach 2:
The connecting layer serves as an intermediary element between the semiconductor body and carrier, providing both mechanical attachment and electrical connection functions. This intermediate layer simplifies the overall structure by eliminating the need for direct eutectic bonding between dissimilar materials, making the fastening process more compatible with standard semiconductor manufacturing techniques.
3Ease of manufacture
If the connecting layer absorbs radiation, then the material connection is simplified, but the decoupling efficiency decreases
Solution Approach 1:
The patent selects materials for the connecting layer and contact layer with refractive indices matched to the semiconductor body to minimize optical reflection and absorption. By carefully controlling the optical parameters (refractive index) of these layers, the patent reduces radiation absorption while maintaining the mechanical and electrical connection functions, thereby improving decoupling efficiency without complicating the material connection process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly increases the decoupling efficiency of the semiconductor chip while reducing manufacturing costs by simplifying the material connection and optimizing radiation exit, thereby enhancing the chip's luminance and operational efficiency.
Implementation Method 1
a plurality of reflective or scattering elements is formed between the second carrier surface and the active region
Implementation Method 2
a plurality of reflective or scattering elements is formed between the second carrier surface and the active region
Implementation Method 3
a contact layer which is transparent to radiation generated in the active region is formed between the semiconductor body and the connecting layer. The contact layer particularly preferably contains a transparent conductive oxide (transparent conductive oxide, TCO)
Implementation Method 4
the connecting layer is designed to be transparent to radiation generated in the active region. Absorption losses when this radiation passes through the connecting layer can be advantageously reduced in this way
Implementation Method 5
the connecting layer is formed in such a way that wave guidance of the radiation generated in the active region is disrupted within the connecting layer
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A semiconductor chip (1) is specified comprising a carrier (3) and comprising a semiconductor body (2), which comprises a semiconductor layer sequence having an active region (21) provided for generating radiation, wherein: the carrier has a first carrier area (31) facing the semiconductor body (2) and a second carrier area (32) remote from the semiconductor body (2), the semiconductor body (2) is cohesively fixed to the carrier (3) by means of a connecting layer (4), and plurality of reflective or scattering elements (40, 7) are formed between the second carrier area (32) and the active region (21). A method for producing a semiconductor chip is furthermore specified.