Optoelectronic Semiconductor Chip with Silver Reflective Layer
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Solution Overview
Problem
Optoelectronic semiconductor chips with silver-containing reflective layers face issues of metal migration due to electromigration, leading to reduced lifetime and potential damage, especially in moist environments, as silver ions tend to move along electric field lines, causing short circuits and damaging the reflective layer's electrical and optical properties.
Innovation Solution
The semiconductor chip design includes a reflective layer directly connected to the p-type contact without a migration barrier, and an electrically conductive material extending between the contacts to form an electric field that counteracts metal migration, preventing the extraction of metal from the reflective layer and shielding critical areas from migration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a silver-containing reflective layer is used to achieve high reflectivity, then the optical efficiency is improved, but metal migration occurs leading to reduced lifetime
Solution Approach 1:
The patent applies preliminary anti-action by introducing a counteracting electric field through an additional contact location and conductive path. This electric field opposes the electromigration force that drives silver ions from the reflective layer, preventing metal migration before it can cause damage. The counteracting field is established during device operation to continuously counterbalance the migration tendency.
Solution Approach 2:
The patent introduces an intermediary conductive structure (additional contact location and conductive path) that mediates between the reflective layer and the external circuit. This intermediary enables the application of a counteracting electric field without directly modifying the reflective layer itself, thus protecting the silver-containing layer while maintaining its optical function.
2Reliability
If a migration barrier is introduced to prevent metal migration, then the lifetime is improved, but the device complexity increases
Solution Approach 1:
The patent replaces the mechanical/physical barrier approach (migration barriers) with an electric field-based solution. Instead of using material layers to physically block metal migration, the invention uses an electric field to actively counteract the migration force, thus reducing structural complexity while maintaining reliability.
Solution Approach 2:
The patent changes the operational parameters by introducing an additional contact location that enables control of the electric field distribution. By adjusting the electric field parameters through this additional contact, the system dynamically counteracts metal migration without requiring additional physical barrier layers.
3Ease of manufacture
If the reflective layer is directly connected to the contact location without a migration barrier, then the ease of manufacture is improved, but metal migration causes damage
Solution Approach 1:
The patent introduces an intermediary conductive path and additional contact location that acts as a mediator between the reflective layer and the external circuit. This intermediary enables the application of a counteracting electric field that prevents metal migration, thus allowing direct connection without migration barriers while protecting against damage.
Solution Approach 2:
The patent applies preliminary anti-action by establishing a counteracting electric field through the additional contact location before metal migration can cause damage. This preventive electric field counterbalances the electromigration force, allowing simple direct connections without migration barriers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly inhibits metal migration, enhancing the longevity and efficiency of the optoelectronic semiconductor chip by preventing damage to the reflective layer and maintaining its optical and electrical properties, while also simplifying production and reducing costs by omitting complex encapsulation.
Implementation Method 1
The reflective layer is provided for reflecting electromagnetic radiation that is generated in the optoelectronic semiconductor chip or is to be detected in the optoelectronic semiconductor chip
Implementation Method 2
an electrically conductive material extending between the contacts to form an electric field that counteracts metal migration
Implementation Method 3
the metal that tends toward migration, on account of the migration movement in the electric field... the migration of the metal from the reflective layer reduces the lifetime of the optoelectronic semiconductor chip
Data Source
AI summary
An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.