Semiconductor Chip Substrate Connection via Pressed Metallization Layers
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Solution Overview
Problem
The existing methods for connecting semiconductor chips to substrates are complex and prone to contamination, involving multiple steps and risks of electrical short circuits due to the use of solder, sintered metal powder, or adhesives.
Innovation Solution
A method involving the production of contact metallization layers on both the semiconductor chip and substrate, which are then pressed together at controlled temperatures below their melting points to form a direct, material-fit connection, reducing the risk of contamination and simplifying the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If solder, sintered metal powder, or adhesive is used as connecting medium, then material-fit connection is achieved, but the process becomes elaborate and contamination risk increases
Solution Approach 1:
The invention extracts and eliminates the connecting medium (solder, adhesive, or sintered metal powder) from the connection process. By directly pressing the semiconductor chip to the substrate without any intermediate material, the process becomes simpler while maintaining reliable electrical and mechanical connection.
Solution Approach 2:
The invention merges the semiconductor chip and substrate into direct contact through pressing, combining the two components without any intermediate layer. This direct merging eliminates the need for separate application, drying, or curing steps required for traditional connecting media.
2Reliability
If connecting medium is applied onto semiconductor chip or substrate, then material-fit connection is achieved, but the number of individual steps increases
Solution Approach 1:
The invention removes the connecting medium entirely from the process, eliminating the time required for applying, positioning, drying, and curing the medium. The connection is achieved through direct pressing of the chip to the substrate.
Solution Approach 2:
The invention performs preliminary preparation by forming contact metallization layers on both the semiconductor chip and substrate before pressing. This preliminary metallization ensures good electrical contact and mechanical bonding, allowing the connection to be achieved in a single pressing step without subsequent processing.
3Reliability
If electrically conductive connecting medium is used, then electrical connection is achieved, but risk of electrical short circuits increases
Solution Approach 1:
The invention extracts the electrically conductive connecting medium from the process and replaces it with direct metal-to-metal contact through pressed contact metallization layers. This eliminates the risk of the medium splashing, running, or crumbling to cause electrical short circuits.
Solution Approach 2:
The invention uses contact metallization layers as an intermediary between the semiconductor chip and substrate. These controlled metal layers provide reliable electrical connection without the uncontrolled behavior of liquid or paste connecting media, preventing short circuits while ensuring good electrical contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a strong, reliable, and contamination-free material-fit connection between the semiconductor chip and substrate, enhancing the production efficiency and reducing the risk of electrical short circuits, while maintaining the connection without application pressure.
Implementation Method 1
The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first contact metallization layer and the second contact metallization layer bear directly and extensively on one another
Implementation Method 2
During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. Correspondingly, the second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer
Data Source
AI summary
A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.