Semiconductor Chip Substrate Removal for Thermal and Electrical Performance

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Solution Overview

Problem

Semiconductor substrates often cause ohmic losses and thermal resistance, and are prone to handling breakage, limiting their performance and manufacturing tolerances in semiconductor devices.

Innovation Solution

The method involves using temporary or artificial substrates, such as those produced through the SMART Cut technique, to create thin semiconductor layers that are mounted on additional carriers, allowing for improved electrical and thermal properties and reduced substrate-related parasitics, along with the application of metal blocks and encapsulation layers for enhanced stability and performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If semiconductor substrates are used, then device performance can be maintained, but ohmic losses and thermal resistance increase

Engineering Contradiction:
Improvedevice performanceVSAvoidohmic losses and thermal resistance
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent extracts and removes the semiconductor substrate from the device structure, retaining only the essential semiconductor layer. This eliminates the substrate's harmful electrical and thermal properties while preserving the functional semiconductor material, directly resolving the contradiction between maintaining device performance and reducing energy losses.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent fundamentally changes the structural parameter of the semiconductor device by transitioning from a substrate-based architecture to a suspended or substrate-free architecture. This parameter change eliminates the substrate's negative electrical characteristics (ohmic losses, thermal resistance) while maintaining the semiconductor layer's functional properties.

Inventive Principle:
Principle #35Parameter changes

2Strength

If semiconductor substrates are used, then structural support is provided, but handling breakage susceptibility increases

Engineering Contradiction:
Improvestructural supportVSAvoidhandling breakage resistance
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent removes the fragile semiconductor substrate that causes handling breakage issues, while maintaining structural support through alternative means such as carrier substrates or support structures that do not exhibit the same breakage susceptibility. This resolves the contradiction between providing structural support and preventing handling breakage.

Inventive Principle:
Principle #2Taking out (Extraction)

3Ease of manufacture

If conventional substrates are used, then manufacturing process is simplified, but process tolerance limitations occur

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidprocess tolerance
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent changes the manufacturing approach by eliminating the substrate attachment step and associated process tolerances. This allows for more precise control of the semiconductor layer properties and device characteristics, resolving the contradiction between manufacturing simplicity and process tolerance limitations.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10134636B2Methods for producing semiconductor devices
Publication Date: 2018.11.20 INFINEON TECH AUSTRIA AG
  • US10134636B2 patent drawing
  • US10134636B2 patent drawing
  • US10134636B2 patent drawing

AI summary

A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.