Semiconductor Chip Layout for Lower Thermal Interference

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Solution Overview

Problem

Semiconductor chips in conventional devices experience thermal interference, leading to increased thermal resistance and limited current flow due to heat concentration, particularly affecting chips aligned near the center.

Innovation Solution

The semiconductor device employs a support structure with a ceramic insulating substrate and copper-based conductors, along with a thermal dissipating member, to manage heat distribution and reduce thermal interference among chips.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If semiconductor chips are linearly aligned at predetermined intervals, then the device structure is simple and easy to manufacture, but thermal interference causes heat concentration and increased thermal resistance

Engineering Contradiction:
Improveease of manufactureVSAvoidtemperature
Core Design Contradiction:
Ease of manufactureVSTemperature

Solution Approach 1:

The patent transitions from linear alignment (one-dimensional arrangement) to a two-dimensional matrix arrangement of semiconductor chips. This dimensional change allows heat to dissipate in multiple directions rather than concentrating along a single linear path, effectively reducing thermal interference while maintaining manufacturing simplicity through systematic positioning.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides the semiconductor chip array into multiple independent regions or modules within the matrix structure. This segmentation creates thermal zones that can be managed independently, preventing heat concentration from affecting the entire device uniformly and allowing for better thermal distribution across the substrate.

Inventive Principle:
Principle #1Segmentation

2Area of stationary object

If semiconductor chips are linearly aligned, then the device occupies less area, but thermal interference prevents large current flow

Engineering Contradiction:
ImproveareaVSAvoidcurrent capacity
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

By arranging chips in a two-dimensional matrix rather than linear configuration, the patent increases the effective heat dissipation surface area without proportionally increasing the device footprint. This dimensional arrangement allows current to flow through multiple parallel paths while heat disperses across a larger thermal management surface, enabling higher current capacity within compact dimensions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements localized thermal management strategies at different positions within the chip matrix, with enhanced cooling provisions at high-density heat generation zones. This local quality approach ensures that critical areas with higher current loads receive proportionate thermal management, maintaining reliability across the entire device while occupying minimal area.

Inventive Principle:
Principle #3Local quality

3Device complexity

If semiconductor chips are disposed near the center in linear alignment, then the structure is compact, but heat concentration reaches high temperature due to thermal interference

Engineering Contradiction:
Improvedevice complexityVSAvoidthermal interference
Core Design Contradiction:
Device complexityVSObject-affected harmful factors

Solution Approach 1:

The matrix arrangement distributes chips across two dimensions, eliminating the central concentration effect inherent in linear alignment. Heat generation is spatially distributed across the matrix surface rather than concentrated at the center, and thermal pathways are provided in multiple directions, reducing thermal interference while maintaining structural compactness.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces thermal management intermediaries such as heat dissipation substrates, thermal interface materials, and cooling structures positioned between and around the semiconductor chips. These intermediary elements facilitate heat transfer from the chip surfaces to the cooling system, preventing heat concentration and high temperature formation while keeping the overall device structure compact and simple.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances heat dissipation, reducing thermal resistance and allowing for increased current capacity and efficient operation of semiconductor devices.

Implementation Method 1

The semiconductor device employs a support structure with a ceramic insulating substrate and copper-based conductors, along with a thermal dissipating member, to manage heat distribution and reduce thermal interference among chips

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250391750A1Semiconductor device, semiconductor assembly, and vehicle
Publication Date: 2025.12.25 ROHM CO LTD
  • US20250391750A1 patent drawing
  • US20250391750A1 patent drawing
  • US20250391750A1 patent drawing

AI summary

A semiconductor device includes: a supporting conductor including a first obverse surface facing a first side in a thickness direction; a plurality of semiconductor elements including four or more semiconductor elements disposed on the first obverse surface; and a sealing resin covering the plurality of semiconductor elements and the supporting conductor. The plurality of semiconductor elements are disposed side by side in a first direction perpendicular to the thickness direction, and include a first semiconductor element and a second semiconductor element that are located near a center in the first direction. A first distance, which is a distance between a center of the first semiconductor element and a center of the second semiconductor element, is greater than a second distance, which is a distance between the center of one of the first semiconductor element and the second semiconductor element and a center of one of a third semiconductor element and a fourth semiconductor element that is adjacent to the one of the first semiconductor element and the second semiconductor element in the first direction.