Semiconductor Chip Layout With Segmented Thermal Sensing

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Solution Overview

Problem

Current semiconductor devices face challenges in efficiently managing temperature differences between output and control regions, leading to potential overheating and reduced performance.

Innovation Solution

The semiconductor device incorporates a configuration with multiple temperature detecting regions and a control circuit that utilizes temperature-sensitive diodes to generate temperature detecting signals, allowing for precise temperature monitoring and control, thereby protecting the device from overheating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If temperature monitoring is implemented in semiconductor devices, then overheating protection is improved, but device complexity increases

Engineering Contradiction:
Improveoverheating protectionVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The semiconductor device is divided into multiple temperature detecting regions (first temperature detecting region and second temperature detecting region) with different temperature characteristics. Each region independently monitors temperature in its specific area, enabling localized thermal management without requiring a single complex monitoring system for the entire device.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Temperature-sensitive diodes are introduced as intermediary elements that convert temperature information into electrical signals. These diodes act as mediators between the physical temperature field and the control circuit, enabling indirect but precise temperature detection without direct physical contact with hot spots.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If multiple temperature detecting regions are added, then temperature monitoring precision is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvetemperature monitoring precisionVSAvoidmanufacturing complexity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The temperature detecting regions are integrated into the existing semiconductor device structure during the manufacturing process. The first and second temperature detecting regions are formed within the same device architecture, sharing common fabrication steps and reducing the need for separate manufacturing processes for each monitoring region.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

Different temperature-sensitive diodes are positioned at locations with different thermal characteristics within the device. By strategically placing diodes in regions with varying temperature parameters (output region vs. control region), the system achieves comprehensive temperature monitoring across different operational zones using standard manufacturing techniques.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively manages temperature differences, preventing overheating and ensuring optimal performance by dynamically adjusting operational states based on temperature feedback.

Implementation Method 1

a first temperature-sensitive diode 17A formed in the first temperature detecting region 9A

Methodology Applied
Scientific EffectTemperature-sensitive diode effect: Diode

Data Source

PatentUS20240153944A1Semiconductor device
Publication Date: 2024.05.09 ROHM CO LTD
  • US20240153944A1 patent drawing
  • US20240153944A1 patent drawing
  • US20240153944A1 patent drawing

AI summary

The semiconductor device includes a chip which has a main surface, a diode region which is arranged in the main surface, trench structures which are formed in the main surface at an interval in the diode region, the trench structures each having an electrode structure including an upper electrode and a lower electrode which are embedded in a trench across an insulator in an up/down direction, and a diode which has a pn-junction portion that is formed in a surface layer portion of the main surface at a region between the trench structures.