Semiconductor Circuit Aging Restoration via Segmented Storage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor circuits face challenges in maintaining optimal operation due to aging deterioration in non-volatile storage elements, which can lead to failures in storing information correctly and affecting circuit performance.
Innovation Solution
Incorporating a sequential circuit unit with flip flops and non-volatile storage elements that perform store and shift operations, along with a memory to store data outputted from the shift register, allowing for the restoration of voltage states after power supply interruption and testing for data integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If non-volatile storage elements are continuously rewritten over many years to maintain circuit operation, then the circuit can quickly restore after power interruption, but aging deterioration occurs in the non-volatile storage elements
Solution Approach 1:
The circuit is divided into multiple logic circuit units, each with its own non-volatile storage element and flip-flop. This segmentation allows the system to distribute the storage function across multiple elements, reducing the burden on any single element and enabling selective operation to minimize aging impact.
Solution Approach 2:
The non-volatile storage elements store voltage states in advance before power interruption occurs. This preliminary action ensures that when power is interrupted and then restored, the circuit can quickly recover its state without needing to reinitialize, thereby achieving fast restoration without continuous rewriting.
2Loss of time
If non-volatile storage elements are used to achieve quick restoration after power interruption, then restoration time is reduced, but aging deterioration affects circuit operation
Solution Approach 1:
A test unit is implemented that periodically tests the stored data in non-volatile storage elements and compares it with expected values. This feedback mechanism detects aging-related errors and triggers corrective actions, ensuring that the circuit maintains reliable operation despite the presence of aging deterioration in storage elements.
Solution Approach 2:
The system changes the operational parameters of non-volatile storage elements by selectively activating only those units that are functioning properly. When aging deterioration is detected in certain storage elements, the system adjusts its operation to bypass or refresh those specific elements, thereby maintaining overall circuit reliability while minimizing the impact of aging.
3Speed
If multiple logic circuit units with non-volatile storage elements are implemented, then quick restoration is achieved, but device complexity increases
Solution Approach 1:
Each logic circuit unit is designed with universal functionality, where the non-volatile storage element and flip-flop serve multiple purposes: data storage during operation, state preservation during power interruption, and testable units for detecting aging. This multi-functionality reduces the need for separate dedicated components for each function, thereby managing complexity while achieving fast restoration.
4Reliability
If continuous operation monitoring and testing is performed to detect aging deterioration, then circuit reliability is maintained, but energy consumption increases
Solution Approach 1:
The test unit performs data testing and comparison operations periodically rather than continuously. This periodic action is triggered by specific events such as power restoration or at scheduled intervals, allowing the system to maintain reliability through regular monitoring while minimizing energy consumption by keeping the test function inactive during normal operation.
Data Source
AI summary
A semiconductor circuit of the disclosure includes: a sequential circuit unit including a plurality of logic circuit units that include respective flip flops and respective non-volatile storage elements, the sequential circuit unit performing, in a first term, store operation in which the storage elements in the plurality of the logic circuit units store respective voltage states in the plurality of the logic circuit units, and shift operation in which the flip flops in the plurality of the logic circuit units operate as a shift register; and a first memory that stores, in the first term, first data or second data, the first data being outputted from the shift register by the shift operation, and the second data corresponding to the first data.


