Semiconductor Circuit Disturbance Reduction via Threshold State Control

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Solution Overview

Problem

Existing semiconductor circuits face challenges in minimizing disturbance and power consumption, particularly when incorporating nonvolatile storage elements to quickly resume operation after power restart.

Innovation Solution

A semiconductor circuit configuration that includes a first and second circuit, transistors, and a driving section, where the first circuit generates an inverted voltage applied to a second node, and the second circuit generates an inverted voltage applied to the first node, with specific transistors and control voltages used to store threshold states, thereby reducing disturbance and power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of time

If a nonvolatile memory is incorporated to enable quick return operation after power restart, then the return time to operating state is reduced, but disturbance may occur in the storage element

Engineering Contradiction:
Improvereturn time to operating stateVSAvoiddisturbance in storage element
Core Design Contradiction:
Loss of timeVSReliability

Solution Approach 1:

The patent applies preliminary action by setting the threshold state of the first transistor to a specific state (first threshold state or second threshold state) before power supply is stopped. This is achieved by controlling the gate voltage of the first transistor through the third transistor during a predetermined period before power off. When power is restarted, the stored threshold state enables the circuit to quickly return to operation without requiring time-consuming reinitialization, while the controlled threshold state prevents disturbance in the nonvolatile storage element.

Inventive Principle:
Principle #10Preliminary action

2Use of energy by moving object

If power supply is stopped to reduce power consumption, then energy savings are achieved, but the circuit cannot return to operating state immediately after restart

Engineering Contradiction:
Improvepower consumptionVSAvoidtime to return to operating state
Core Design Contradiction:
Use of energy by moving objectVSLoss of time

Solution Approach 1:

The patent applies preliminary action by preparing the threshold state of the first transistor before power supply is stopped. The driving section controls the third transistor to set the gate voltage of the first transistor to a specific level during a predetermined period before power off. This preliminary preparation ensures that when power is restarted, the circuit can immediately resume operation using the pre-established threshold state, eliminating the need for time-consuming reinitialization sequences.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces the mechanical/electrical reinitialization process with a nonvolatile storage mechanism. Instead of using volatile memory that requires continuous power to maintain state, the first transistor's threshold state is stored nonvolatibly, allowing the circuit to maintain its operational state information without continuous power supply. This substitution enables immediate return to operation after power restart.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Reliability

If the threshold state of the first transistor is controlled to prevent disturbance, then reliability is improved, but additional control circuitry and complexity are required

Engineering Contradiction:
Improvedisturbance prevention in storage elementVSAvoidcontrol circuitry for threshold state
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the threshold state control function with the existing driving section that controls the second transistor. The same driving section that manages the second transistor's on/off state also controls the third transistor to set the first transistor's threshold state. This integration eliminates the need for separate dedicated control circuitry for threshold management, reducing overall device complexity while maintaining reliable disturbance prevention.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The driving section is designed with multi-functionality, serving both to control the second transistor for power management and to control the third transistor for threshold state setting. This universal control approach allows a single control unit to perform multiple functions, reducing the need for additional specialized circuitry and minimizing device complexity while achieving reliable disturbance prevention.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The configuration effectively reduces the likelihood of disturbance and power consumption by allowing the semiconductor circuit to quickly return to a pre-power-off state after restart, utilizing ferroelectric-gate transistors to store information and maintain threshold states.

Implementation Method 1

The first transistor includes a gate, a drain, and a source, and is configured to store a threshold state

Methodology Applied
Scientific EffectFerroelectric-gate effect:

Data Source

PatentUS11024346B2Semiconductor circuit, driving method, and electronic device with less disturbance
Publication Date: 2021.06.01 SONY SEMICON SOLUTIONS CORP
  • US11024346B2 patent drawing
  • US11024346B2 patent drawing
  • US11024346B2 patent drawing

AI summary

A semiconductor circuit includes a first circuit to apply an inverted voltage of a voltage at a first node to a second node, a second circuit to apply an inverted voltage of a voltage at the second node to the first node, a first transistor that includes a gate, a drain, and a source, and stores a threshold state, a second transistor that couples the first node to a first terminal by being turned on, a third transistor that couples a first predetermined node to the gate of the first transistor, and a driving section that controls operations of the second transistor and the third transistor, and applies a control voltage to a second terminal. The first terminal is one of the drain or the source of the first transistor. The second terminal is another of the drain or the source of the first transistor.