Semiconductor Electrode Covering Structure for Active Clamping Heat Transfer
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Solution Overview
Problem
Conventional semiconductor devices face challenges in efficiently absorbing energy through active clamping, leading to potential overheating due to inadequate heat transfer and thermal conductivity, especially when energy produced by electromotive force is not effectively managed.
Innovation Solution
The semiconductor device incorporates a covering portion with higher thermal conductivity than the sealing resin, positioned between the first electrode and the sealing resin, which promotes heat transfer and includes a first wire structure with specific geometrical features to enhance energy absorption and prevent overheating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional sealing resin structure is used, then the device structure is simple, but the thermal conductivity is insufficient leading to inadequate heat transfer
Solution Approach 1:
The patent applies composite materials by combining sealing resin with a covering portion made of metal or metal alloy that has higher thermal conductivity. This composite structure allows the sealing function to be maintained while significantly improving heat transfer efficiency from the first electrode to the external environment, resolving the contradiction between structural simplicity and thermal performance.
2Use of energy by moving object
If energy absorption through active clamping is increased, then operational efficiency is improved, but the risk of overheating increases due to inadequate heat transfer
Solution Approach 1:
The covering portion acts as an intermediary thermal conduction path between the first electrode and the sealing resin. It mediates the heat transfer process by providing a high thermal conductivity pathway that efficiently conducts away the heat generated during active clamping energy absorption, thus enabling increased energy absorption without excessive temperature rise.
3Temperature
If the covering portion thickness is increased, then heat transfer is improved, but the device volume increases
Solution Approach 1:
The patent applies local quality by positioning the high thermal conductivity covering portion specifically at the location where heat generation occurs (around the first electrode), rather than uniformly throughout the entire device. This localized approach improves heat transfer efficiency at the critical heat source area while minimizing the overall volume increase of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for increased energy absorption through active clamping, reducing the risk of excessive temperature rise in the semiconductor element by improving heat transfer and maintaining a uniform thickness of the covering portion, thereby enhancing the device's operational efficiency.
Implementation Method 1
a covering portion (7) which includes a material having a higher thermal conductivity than the sealing resin (8) and is in contact with both the first electrode (401) and the sealing resin (8)
Data Source
AI summary
A semiconductor device includes: a semiconductor element that includes an element body containing a semiconductor, and a first electrode disposed on the element body; a first wire joined to the first electrode; a sealing resin that covers the semiconductor element and the first wire; and a covering portion interposed between the first electrode and the sealing resin. The first wire includes a first portion that extends from an inside of the first electrode toward an outside of the first electrode as viewed in a thickness direction of the semiconductor. The covering portion contains a material having a higher thermal conductivity than the sealing resin. The covering portion is in contact with the first portion of the first wire.