Semiconductor Component Cleaning Furnace for Chloride Vapor Control
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Solution Overview
Problem
Current cleaning methods for semiconductor production apparatus components using chlorine-based gases result in the formation of chlorides like gallium chloride, which precipitate and corrode metal components due to their low boiling points and deliquescent properties, leading to corrosion issues and complexity in removing reaction products from the cleaning furnace.
Innovation Solution
A cleaning apparatus and method that includes a heating device, decompression device, gas introduction and discharge pipes, and temperature control mechanisms to maintain specific temperature ranges within the cleaning processing furnace and gas discharge pipe, preventing precipitation of reaction products by ensuring they remain in a vapor state and are easily captured.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a chlorine-based gas is used as an etching gas to clean the component, then the etching rate is improved, but the reaction product precipitates and attaches to metal components causing corrosion
Solution Approach 1:
The patent controls the temperature parameter of the cleaning processing furnace to be 200°C or higher, which changes the physical state of the reaction product from solid precipitate to vapor, preventing attachment and corrosion while maintaining effective cleaning
Solution Approach 2:
The patent converts the harmful precipitation property of gallium chloride into a beneficial vaporization behavior by maintaining elevated temperature, allowing the reaction product to be discharged as gas rather than attaching and corroding metal components
2Stability of the object's composition
If the temperature in the cleaning processing furnace is raised to prevent precipitation, then the reaction product remains in vapor state, but energy consumption increases
Solution Approach 1:
The patent optimizes the temperature parameter to a specific range (200°C or higher, preferably 300°C or higher, more preferably 400°C or higher) that is sufficient to prevent precipitation but not excessively high, balancing the vapor state maintenance with energy efficiency
3Object-affected harmful factors
If additional devices such as cooling plates are installed to capture reaction products, then the attachment of reaction products is prevented, but the device complexity increases
Solution Approach 1:
The patent extracts the harmful function of temperature control from complex additional devices and implements it through simple temperature control of the existing furnace, eliminating the need for cooling plates, heating plates, or temperature difference generation mechanisms
Solution Approach 2:
The patent makes the cleaning processing furnace itself perform the dual function of cleaning and preventing precipitation through its own temperature control, without requiring separate dedicated devices for these functions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents the attachment of reaction products in the cleaning furnace, thereby preventing corrosion and simplifying the cleaning process, while maintaining a simple and cost-effective structure by ensuring all reaction products are evaporated and captured efficiently.
Implementation Method 1
a heating device which is configured to heat the component of a semiconductor production apparatus in the cleaning processing furnace
Implementation Method 2
a decompression device which is configured to evacuate the inside of the cleaning processing furnace
Implementation Method 3
a first temperature control device which is configured to maintain a temperature of an inner surface of the cleaning processing furnace within a required temperature range; and a second temperature control device which is configured to maintain a temperature inside of the gas discharge pipe within a required temperature range
Implementation Method 4
a gas introduction pipe which is configured to introduce a cleaning gas capable of reacting with the semiconductor into the cleaning processing furnace; and a gas discharge pipe which is configured to discharge a reaction product of the semiconductor and the cleaning gas from the cleaning processing furnace
Data Source
AI summary
The object of the present invention is to provide a cleaning apparatus for a component of a semiconductor production apparatus, which is capable of preventing the attachment of reaction products into the cleaning processing furnace by a simple structure, the present invention provides a cleaning apparatus (1) for a component of a semiconductor production apparatus including: a cleaning processing furnace (2) which is configured to house the component (10) of a semiconductor production apparatus; a heating device (3); a gas introduction pipe (4); a gas discharge pipe (5); a decompression device (6); a first temperature control device (7); a second temperature control device (8); and a purge gas supply device (9).