Semiconductor Substrate Cleaning Composition for CMP Residue Removal
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Solution Overview
Problem
Current cleaning compositions for semiconductor substrates after chemical mechanical polishing (CMP) treatment fail to simultaneously achieve excellent suppression of metal surface roughness, organic residue removal, and inorganic residue removal effectively.
Innovation Solution
A cleaning composition comprising an amine compound with a specific pKa value, an anticorrosion agent, and an organic solvent, along with water, is used to clean semiconductor substrates post-CMP treatment, where the amine compound includes tertiary amine compounds and quaternary ammonium salt compounds, and the organic solvent is selected based on Hansen solubility parameters to enhance surface smoothness and residue removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning compositions are used for cleaning semiconductor substrates after CMP treatment, then cleaning of organic residues can be achieved, but suppression of metal surface roughness and removal of inorganic residues are insufficient
Solution Approach 1:
The patent changes the chemical parameters of the cleaning composition by specifying a tertiary amine compound with pKa of 8.0 or more (such as triethanolamine with pKa 7.8-8.3) and controlling the pH to 9.0-11.0, along with specific organic solvents (ethylene glycol alkyl ether, diethylene glycol alkyl ether) in defined ratios. These parameter changes enable simultaneous achievement of metal surface roughness suppression, organic residue removal, and inorganic residue removal that conventional compositions fail to achieve.
2Reliability
If cleaning compositions focus on organic residue removal, then organic contaminants can be effectively removed, but inorganic residues and metal surface roughness suppression are compromised
Solution Approach 1:
The patent creates a multi-functional cleaning composition that simultaneously performs three functions: (1) removes organic residues through surfactants and organic solvents, (2) suppresses metal surface roughness through the specific tertiary amine compound with pKa ≥8.0 that forms protective complexes with metal ions, and (3) removes inorganic residues through the basic pH environment. This universal composition replaces the need for multiple separate cleaning steps.
3Reliability
If strong cleaning agents are used to remove all residues, then removability of residues improves, but surface roughness of metal parts increases and electrical characteristics deteriorate
Solution Approach 1:
The patent optimizes the pH parameter to a specific range of 9.0-11.0 using a tertiary amine compound with pKa of 8.0 or more, which provides sufficient basicity to remove inorganic residues and organic contaminants while being mild enough to suppress metal surface roughness. The controlled pH prevents excessive etching or roughening of metal surfaces that would occur with stronger cleaning agents, thereby maintaining electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed cleaning method effectively suppresses metal surface roughness and removes both organic and inorganic residues, improving the electrical characteristics of semiconductor substrates by ensuring better cleaning performance compared to existing methods.
Implementation Method 1
an amine compound includes at least one compound X selected from the group consisting of a tertiary amine compound in which a pKa of a conjugate acid is 8.0 or more and a quaternary ammonium salt compound
Implementation Method 2
the amine compound includes at least one selected from the group consisting of a tertiary amino alcohol in which a pKa of a conjugate acid is 8.0 or more
Implementation Method 3
an organic solvent; and water, in which the amine compound includes at least one compound X
Implementation Method 4
an anticorrosion agent
Data Source
AI summary
An object of the present invention is to provide a cleaning composition and a cleaning method of a semiconductor substrate, in which suppression property of surface roughness of a metal part in a substrate is excellent, removability of organic residues is excellent, and removability of inorganic residues is excellent. The cleaning composition of the present invention is a cleaning composition used for cleaning a substrate which has been subjected to a chemical mechanical polishing treatment, the cleaning composition containing an amine compound, an anticorrosion agent, an organic solvent, and water, in which the amine compound includes at least one compound X selected from the group consisting of a tertiary amine compound in which a pKa of a conjugate acid is 8.0 or more and a quaternary ammonium salt compound containing a quaternary ammonium cation having a total number of carbon atoms of 5 or more.