Semiconductor Cleaning Composition With Dual-Allotrope Polymer
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Solution Overview
Problem
As semiconductor manufacturing processes produce increasingly miniaturized, high-density, and high-performance devices, contaminants on wafer surfaces negatively impact yield and quality reliability, necessitating an effective cleaning process.
Innovation Solution
A semiconductor cleaning composition comprising a hydrophobic polymer with a nonpolar and polar allotrope, an organic acid, and a solvent is used to form a thin film on the substrate, which is then easily peeled off with distilled water, along with acetone, to remove contaminants effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional cleaning processes are used, then manufacturing process simplicity is maintained, but cleaning efficiency on miniaturized high-density substrates deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning solution by incorporating a hydrophobic polymer with specific polar/nonpolar ratios (5-20% polar allotrope), organic acids (1-1.5 wt%), and solvents in specific concentrations (5-7 wt% polymer). These parameter changes enable effective removal of both hydrophobic and hydrophilic contaminants on miniaturized substrates while maintaining process simplicity
Solution Approach 2:
The cleaning solution uses a composite formulation combining hydrophobic polymer, organic acid, and solvent components. This composite approach allows the solution to simultaneously address multiple contaminant types (hydrophobic and hydrophilic) and substrate types, improving cleaning efficiency without complicating the manufacturing process
2Productivity
If stronger cleaning methods are used to remove contaminants, then cleaning efficiency improves, but substrate damage increases
Solution Approach 1:
The patent optimizes the concentration parameters of cleaning agents to achieve effective contaminant removal at low levels (5-7 wt% polymer, 1-1.5 wt% organic acid). This parameter optimization ensures sufficient cleaning power while minimizing substrate damage, avoiding the need for aggressive cleaning methods that could harm the substrate
Solution Approach 2:
The hydrophobic polymer acts as an intermediary substance that facilitates contaminant removal through a thin film mechanism. The polymer forms a thin film on the substrate, traps contaminants, and allows gentle removal with distilled water, mediating between the cleaning objective and substrate protection
3Productivity
If hydrophobic polymers are used for cleaning, then hydrophobic contaminant removal improves, but hydrophilic substrate compatibility deteriorates
Solution Approach 1:
The patent applies local quality by incorporating both polar and nonpolar regions within the hydrophobic polymer structure (5-20% polar allotrope). This dual-nature structure allows the polymer to interact with both hydrophobic contaminants and hydrophilic substrates, enabling effective cleaning across different substrate types while maintaining hydrophobic contaminant removal capability
Solution Approach 2:
The cleaning solution uses a composite formulation that combines hydrophobic polymer with organic acids and solvents. This composite approach enhances versatility by enabling the solution to effectively clean both hydrophobic and hydrophilic substrates, expanding adaptability beyond what a single-component hydrophobic cleaner could achieve
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high cleaning efficiency for both hydrophobic and hydrophilic substrates, reducing substrate damage and enhancing semiconductor manufacturing yield and quality by effectively removing contaminants, particularly SiO2 and SiN particles.
Implementation Method 1
forming a thin film on the substrate by using the cleaning solution
Implementation Method 2
the thin film is separated from the substrate by the spraying of the distilled water
Data Source
AI summary
A semiconductor cleaning composition includes: a hydrophobic polymer, an organic acid; and a solvent, wherein the hydrophobic polymer includes a first allotrope and a second allotrope, wherein the first allotrope is nonpolar, wherein the second allotrope is polar, and wherein the second allotrope is about 5% to about 20% of the hydrophobic polymer.