Semiconductor Cleaning Composition Film Formation
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Solution Overview
Problem
In semiconductor substrate production, the miniaturization and increased aspect ratio of patterns on substrates make it difficult for liquid and gas cleaning methods to effectively remove particles from between pattern walls, as these methods struggle with fluid flow and particle detachment.
Innovation Solution
A cleaning composition comprising a solvent and a polymer with fluorine and silicon atoms is applied to the substrate, forming a film that can be easily removed, facilitating the efficient removal of particles by dissolving the film with a suitable liquid, thereby improving particle removal efficiency, especially on substrates with strong interactions like silicon nitride.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If liquid and gas cleaning methods are used, then the substrate surface can be cleaned, but it becomes difficult to remove particles from between pattern walls due to poor fluid flow
Solution Approach 1:
The patent replaces mechanical liquid/gas flow-based cleaning with a coating-based cleaning method. A coating liquid is applied to form a film on the substrate surface, and particles are removed by detaching this film, eliminating the need for fluid flow between narrow pattern walls.
Solution Approach 2:
The patent changes the cleaning mechanism from fluid dynamics to film formation and detachment. By controlling the coating liquid composition (solvent and polymer with fluorine/silicon atoms), the film can be formed and subsequently removed, achieving particle removal without relying on fluid flow characteristics.
2Productivity
If conventional cleaning methods are used, then the process is simple, but particle removal rate is low and pattern collapse may occur
Solution Approach 1:
The patent introduces a coating liquid as an intermediary substance that forms a removable film. This film acts as a mediator to capture and remove particles from the substrate surface, including those between pattern walls, without requiring complex cleaning equipment or processes.
Solution Approach 2:
The coating liquid comprises a composite system of solvent and polymer containing fluorine and/or silicon atoms. This composite material formulation enables the film to be formed on the substrate and then easily removed, achieving high particle removal rates while maintaining process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning composition enables high-efficiency removal of particles from substrate surfaces, including those with complex patterns, by forming a removable film that reduces the time required for particle detachment and prevents pattern collapse, suitable for future miniaturization and increased aspect ratios in semiconductor manufacturing.
Implementation Method 1
coating a cleaning composition on a surface of a semiconductor substrate to form a film
Implementation Method 2
the entire treatment liquid solidified or hardened is dissolved in a removing liquid to remove particles on the substrate surface
Data Source
AI summary
A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.