Semiconductor Cleaning Composition for Hard Mask Removal
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Solution Overview
Problem
Current liquid cleaning compositions for semiconductor devices are inadequate in removing hard masks and dry etch residues without damaging low-dielectric-constant interlayer dielectric films and cobalt or cobalt alloys, as per the limitations identified in existing patent documents.
Innovation Solution
A liquid cleaning composition comprising hydrogen peroxide at 10-30% by mass, potassium hydroxide at 0.005-0.7% by mass, aminopolymethylene phosphonic acid at 0.00001-0.01% by mass, and at least one selected from amines and azoles at 0.001-5% by mass, along with water, effectively removes hard masks and dry etch residues while minimizing damage to the low-dielectric-constant interlayer dielectric film and cobalt or cobalt alloys.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If oxygen plasma is used to remove the hard mask, then the hard mask is effectively removed, but the low-dielectric-constant interlayer dielectric film is damaged
Solution Approach 1:
The invention changes the chemical parameters of the cleaning solution by specifying precise concentrations of hydrogen peroxide (10-30%), potassium hydroxide (0.005-0.7%), and aminopolymethylene phosphonic acid (0.00001-0.01%), along with additives (0.001-5%). This chemical parameter optimization enables effective hard mask removal while controlling the etching rate to prevent damage to the low-dielectric-constant interlayer dielectric film.
2Manufacturing precision
If conventional cleaning solutions are used to remove hard masks and dry etch residues, then cleaning is achieved, but damage occurs to cobalt or cobalt alloys and low-dielectric-constant interlayer dielectric films
Solution Approach 1:
The invention employs a composite cleaning solution formulation combining hydrogen peroxide, potassium hydroxide, aminopolymethylene phosphonic acid, and specific additives. This composite chemical system provides selective cleaning action that removes hard masks and dry etch residues while being gentler on cobalt or cobalt alloys and low-dielectric-constant interlayer dielectric films compared to conventional single-component or simpler multi-component solutions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed composition effectively removes hard masks and dry etch residues while preventing damage to the low-dielectric-constant interlayer dielectric film, metal wiring, and cobalt or cobalt alloys, thereby enabling the fabrication of high-precision and high-quality semiconductor devices with good yield.
Implementation Method 1
a liquid cleaning composition comprising hydrogen peroxide at 10-30% by mass, potassium hydroxide at 0.005-0.7% by mass, aminopolymethylene phosphonic acid at 0.00001-0.01% by mass
Implementation Method 2
potassium hydroxide at 0.005-0.7% by mass
Data Source
AI summary
A liquid semiconductor device cleaning composition used in a process of fabricating a semiconductor integrated circuit, for removing a hard mask or a dry etch residue while suppressing damage to a low-dielectric-constant interlayer dielectric film and cobalt or a cobalt alloy, where the liquid semiconductor device cleaning composition contains hydrogen peroxide at 10-30% by mass, potassium hydroxide at 0.005-0.7% by mass, aminopolymethylene phosphonic acid at 0.00001-0.01% by mass, at least one selected from amines and azoles at 0.001-5% by mass and water. A semiconductor device can be cleaned by bringing the liquid cleaning composition into contact with the semiconductor device.