Semiconductor Cleaning Composition for Plasma Etching Residue Removal
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to effectively remove plasma etching residue without damaging wiring structures or interlayer insulating structures, as the properties of residues change with technological progress, and existing cleaning processes may not adequately address this need.
Innovation Solution
A cleaning composition comprising 57 to 95 wt% water, 1 to 40 wt% secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compounds, organic acids, and quaternary ammonium compounds, with a pH of 5 to 10, is used to remove plasma etching residue, specifically employing diol compounds, carboxylic acids, and quaternary ammonium hydroxides to ensure thorough cleaning without damaging semiconductor substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning compositions are used to remove plasma etching residue, then cleaning effectiveness is reduced, but damage to wiring structures and interlayer insulating structures increases
Solution Approach 1:
The patent changes the chemical parameters of the cleaning composition by specifying precise pH ranges (5-10) and component concentrations. The composition includes water (57-95 wt%), hydroxy compounds (1-40 wt%), organic acids, and quaternary ammonium compounds, creating an optimized chemical environment that effectively removes residue while protecting sensitive structures
Solution Approach 2:
The patent employs a composite cleaning composition combining multiple chemical components with complementary functions. The mixture of hydroxy compounds (for chelation), organic acids (for dissolution), and quaternary ammonium compounds (for surfactant action) creates a synergistic effect that enhances cleaning while minimizing damage
2Productivity
If stronger cleaning agents are used to improve residue removal, then cleaning performance increases, but corrosion of semiconductor substrates worsens
Solution Approach 1:
The patent optimizes the pH parameter to ranges of 5-10, avoiding both highly acidic and highly basic conditions that could cause corrosion. The controlled pH ensures effective cleaning while maintaining substrate integrity, preventing aluminum corrosion and protecting interlayer insulating structures
Solution Approach 2:
The quaternary ammonium compounds and organic acids act as intermediary substances that facilitate residue removal through chemical complexation and surfactant action, reducing the need for aggressive cleaning agents that would damage the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed cleaning process efficiently removes plasma etching residue while preventing corrosion and ensuring the integrity of semiconductor substrates, achieving excellent cleaning performance and minimizing aluminum corrosion, even under extended immersion times and low temperatures.
Implementation Method 1
a cleaning composition comprising 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound
Implementation Method 2
1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound
Data Source
AI summary
A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.