Semiconductor Cleaning Composition Selective Etching

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Solution Overview

Problem

The semiconductor process faces challenges in achieving excellent surface properties and efficient cleaning and etching of wafers, particularly in selectively removing organic and inorganic substances without damaging metal or metal oxide components.

Innovation Solution

A composition comprising an inorganic or organic acid as a first component and a compound represented by Formula 1, which includes specific moieties and functional groups, is applied to the semiconductor process for enhanced cleaning, etching, and removal functions, allowing for selective cleaning and etching of specific materials while protecting metal and metal oxide films.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional cleaning and etching compositions are used, then organic and inorganic substances can be removed, but metal and metal oxide films are damaged

Engineering Contradiction:

Improvesurface qualityVSAvoiddamage to metal films

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The invention changes the chemical parameters of the cleaning composition by incorporating specific organic compounds with carboxylic acid groups and controlled molecular weights, along with metallic salts, to achieve selective removal of contaminants while preserving metal films through controlled chemical reactivity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention uses a composite cleaning composition containing multiple components including organic compounds (such as those with formula 1), metallic salts (calcium, magnesium, aluminum), and controlled water content, where each component contributes specific functions to achieve both effective cleaning and film protection

Inventive Principle:

Principle #40Composite materials

2Productivity

If strong acids are used for etching, then etching speed increases, but selectivity between different materials decreases

Engineering Contradiction:

Improveetching speedVSAvoidetching selectivity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The invention applies local quality by designing the cleaning composition to have different reactivity toward different materials - the organic compounds and metallic salts create a chemically selective environment that attacks organic and inorganic contaminants while being gentle on metal and metal oxide films

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The invention controls the pH and chemical composition parameters by using specific organic acids and metallic salts in controlled concentrations, enabling moderate etching speed while maintaining high selectivity through controlled chemical reactivity

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If multiple separate cleaning steps are used, then cleaning thoroughness improves, but process complexity increases

Engineering Contradiction:

Improvecleaning thoroughnessVSAvoidprocess steps

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The invention merges multiple cleaning functions (removal of organic substances, inorganic substances, and metalloid materials) into a single multi-functional composition that can be applied in one step, eliminating the need for separate sequential cleaning processes

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The cleaning composition is designed with universal multi-functionality, where the combination of organic compounds and metallic salts enables simultaneous removal of various types of contaminants (organic, inorganic, metalloid) while also protecting sensitive films, replacing multiple specialized cleaning steps

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition effectively improves the quality of semiconductors by providing excellent surface properties, high cleaning efficiency, and selective etching capabilities, with an etching selectivity ratio suitable for metal nitride, metal oxide, and metal films, enhancing the semiconductor fabrication process.

Implementation Method 1

a cleaning process wherein an organic substance or an inorganic substance is selectively cleaned using the composition for a semiconductor process

Methodology Applied

Scientific EffectChemical cleaning:

Implementation Method 2

a removal process wherein an organic substance or an inorganic substance is selectively removed using the composition for a semiconductor process

Methodology Applied

Scientific EffectChemical etching:

Data Source

PatentUS10968390B2Composition for semiconductor process and semiconductor process

Publication Date: 2021.04.06 SK ENPULSE CO LTD

AI summary

Provided are a composition for a semiconductor process, which comprises a first component comprising an inorganic acid or an organic acid; and a second component comprising a silicon compound represented by Formula 1, and a semiconductor process, which comprises selectively cleaning and/or removing an organic substance or an inorganic substance using the composition.