Semiconductor Cleaning Composition with Titanium Etching Inhibitor
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in effectively removing surface residues without damaging titanium-containing films, which can lead to film exfoliation, cracks, and additional etching, affecting device reliability and electrical characteristics.
Innovation Solution
A cleaning composition comprising a fluorine-containing compound, an oxidizing agent, and a titanium etching inhibitor, such as compounds represented by Formula 1, is used to remove residues while protecting the titanium-containing film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a cleaning composition is used to remove surface residues, then cleaning effectiveness is improved, but the titanium-containing film may be etched or damaged
Solution Approach 1:
The patent introduces a titanium etching inhibitor as an intermediary substance that mediates between the cleaning composition and the titanium-containing film. The inhibitor selectively binds to titanium atoms on the film surface, forming a protective complex that prevents the cleaning agents (fluorine-containing compounds and oxidizing agents) from etching the film, while still allowing residues to be removed effectively
Solution Approach 2:
The patent modifies the chemical parameters of the cleaning composition by adding the titanium etching inhibitor, which changes the interaction mechanism between the cleaning agents and the titanium film. The inhibitor alters the chemical reactivity parameters, reducing the etching rate while maintaining cleaning capability through selective binding to titanium surfaces
2Reliability
If strong cleaning agents are used to remove all residues, then residue removal is improved, but film damage increases
Solution Approach 1:
The titanium etching inhibitor serves as a protective intermediary that selectively binds to titanium surfaces, creating a barrier that prevents strong cleaning agents from damaging the film while allowing residues to be removed. The inhibitor's selective affinity for titanium ensures that film integrity is maintained during aggressive cleaning
Solution Approach 2:
The patent converts the potentially harmful effect of strong cleaning agents into a beneficial outcome by using the titanium etching inhibitor to control and direct the cleaning action. The inhibitor transforms the aggressive cleaning process into a selective residue removal process that protects the film rather than damaging it
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes surface residues without etching the titanium-containing film, ensuring high-quality semiconductor device production by maintaining film integrity.
Implementation Method 1
a fluorine-containing compound, an oxidizing agent, and a titanium etching inhibitor
Implementation Method 2
a titanium etching inhibitor may include a compound represented by Formula 1
Data Source
AI summary
A composition may include a fluorine-containing compound, an oxidizing agent, a titanium etching inhibitor, and a solvent. The titanium etching inhibitor may include a compound represented by Formula 1:A description of Formula 1 is provided in the present specification. A cleaning method may use the composition. A method of manufacturing a semiconductor device may use the composition.