Semiconductor Cleaning Composition: Etch Residue Removal, Tungsten Protection
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Solution Overview
Problem
Existing compositions for removing dry etching residues in semiconductor manufacturing are inadequate in removability and tend to leave behind tungsten residues, leading to interference with subsequent manufacturing steps.
Innovation Solution
A composition comprising a resin with specific groups such as primary, secondary, or tertiary amino groups and hydroxy groups, combined with functional groups having a pKa of 10.0 or less, is used to enhance residue removability and suppress tungsten dissolution, accompanied by a rinsing treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional washing solutions containing polyvinylpyrrolidone are used to remove dry etching residues, then some residue removal is achieved, but tungsten dissolution occurs and residues remain after rinsing
Solution Approach 1:
The patent changes the chemical parameters of the washing solution by specifying precise pH ranges (5.0-9.0) and conductivity ranges (0.01-1.0 S/m), and by defining the concentration ranges of specific components (polyvinylpyrrolidone: 0.01-10 wt%, ammonium fluoride: 0.01-5 wt%, hydroxylamine: 0.01-5 wt%). These parameter optimizations enable effective residue removal while suppressing tungsten dissolution that occurs with conventional solutions.
Solution Approach 2:
The patent employs a composite chemical system combining multiple agents: polyvinylpyrrolidone (for general cleaning), ammonium fluoride (for tungsten complex formation), and hydroxylamine (for residue dissolution). This composite approach creates synergistic effects that achieve superior residue removal while maintaining tungsten integrity, overcoming the limitations of single-component conventional solutions.
2Productivity
If strong washing agents are used to improve residue removal, then removability increases, but tungsten dissolution and damage to the substrate occur
Solution Approach 1:
The patent optimizes the pH value within a moderate range of 5.0-9.0, avoiding excessively strong acidic or basic conditions that would cause tungsten dissolution. The conductivity is controlled at 0.01-1.0 S/m to ensure adequate ionic strength for residue removal without excessive chemical aggression. These parameter controls enable efficient cleaning while protecting the tungsten substrate.
Solution Approach 2:
The patent uses ammonium fluoride as an intermediary agent that selectively forms soluble complexes with tungsten residues through fluorine coordination, enabling gentle removal without direct attack on the tungsten substrate. This intermediary mechanism allows efficient residue dissolution while maintaining substrate integrity, avoiding the harmful effects of strong washing agents.
3Manufacturing precision
If conventional washing compositions are used, then some cleaning effect is achieved, but residues remain after rinsing treatment
Solution Approach 1:
The patent optimizes the concentration of polyvinylpyrrolidone within a specific range of 0.01-10 wt%, which provides adequate surface activity for residue emulsification and removal. The pH and conductivity parameters are also precisely controlled to ensure complete residue dissolution and prevent re-deposition during rinsing, achieving clean surfaces without substance loss.
Solution Approach 2:
The patent ensures continuous effective action by maintaining optimal pH (5.0-9.0) and conductivity (0.01-1.0 S/m) throughout the washing and rinsing process. The formulated composition continues to provide cleaning activity during rinsing, preventing residue re-adhesion and ensuring complete removal, thereby eliminating the problem of residues remaining after rinsing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes dry etching residues while minimizing tungsten dissolution and residue left behind, improving the efficiency and accuracy of semiconductor manufacturing processes.
Implementation Method 1
a resin having a repeating unit A which has a specific group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and salts of these groups, and has a hydroxy group
Implementation Method 2
the washing solution is a washing solution for a substrate for a semiconductor device, containing at least one polymer coagulating agent selected from an organic acid, a sulfonic acid-type anionic surfactant, polyvinylpyrrolidone, or a polyethylene oxide-polypropylene oxide block copolymer
Implementation Method 3
a repeating unit B which has a functional group having a pKa of 10.0 or less or a salt of the functional group
Data Source
AI summary
The present invention provides a composition for a semiconductor device, which has excellent removability of dry etching residues, further suppresses dissolution of tungsten, and is unlikely to leave residues after being applied to an object to be treated and then subjected to a rinsing treatment. The composition for a semiconductor device of the present invention contains a resin including a repeating unit A which has a specific group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and salts of these groups, and has a hydroxy group, and a repeating unit B which has a functional group having a pKa of 10.0 or less or a salt of the functional group, and contains water.