Semiconductor Cleaning Composition for Tungsten Corrosion Inhibition
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Solution Overview
Problem
Conventional cleaning compositions fail to effectively inhibit corrosion of metals like tungsten, aluminum, and copper during the semiconductor manufacturing process, particularly after the ashing step, while also ensuring the removal of plasma etching and ashing residues.
Innovation Solution
A cleaning composition comprising water, an amine compound, hydroxylamine or its salt, a quaternary ammonium compound, an organic acid, and a water-soluble organic solvent, with a pH of 6 to 9, is used to remove plasma etching and ashing residues from semiconductor substrates, thereby inhibiting metal corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning compositions are used to remove plasma etching and ashing residues, then cleaning performance is achieved, but metal corrosion occurs during the cleaning process
Solution Approach 1:
The patent changes the pH parameter of the cleaning composition to a neutral or slightly alkaline range (pH 7-11), which fundamentally alters the chemical reactivity compared to conventional acidic cleaners. This parameter change enables effective residue removal while preventing metal corrosion, as the neutral/alkaline environment does not promote oxidative corrosion of tungsten, aluminum, and copper metals
Solution Approach 2:
The patent employs a composite cleaning system combining multiple components: neutral/alkaline pH base, chelating agents (EDTA, DTPA), surfactants, and optional metal-specific inhibitors. This composite formulation synergistically achieves both cleaning effectiveness and corrosion prevention, where each component contributes to either residue removal or metal protection
2Productivity
If acidic cleaning compositions are used to ensure strong cleaning action, then residue removal is effective, but corrosion of tungsten and other metals is accelerated
Solution Approach 1:
The patent replaces the chemical mechanism of acid-based cleaning with a physical/chemical mechanism based on chelation and surfactant action. Chelating agents bind to metal ions in residues, and surfactants provide wetting and emulsification effects, achieving effective residue removal without the corrosive chemical action of acids on the metal substrate
Solution Approach 2:
The patent introduces chelating agents as intermediary substances that mediate between the cleaning agent and metal residues. These intermediaries (EDTA, DTPA) bind to metal ions in the residues, facilitating their removal without directly attacking the metal substrate, thus preventing corrosion while maintaining cleaning effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes residues and inhibits corrosion of metals such as tungsten, aluminum, and copper, ensuring the integrity of semiconductor substrates during the manufacturing process.
Implementation Method 1
a cleaning composition which can maintain the cleaning performance and inhibit the corrosion of tungsten
Implementation Method 2
it has been required to inhibit the corrosion of other metals such as aluminum, copper, and the like, in addition to the cleaning performance and the inhibition of the corrosion of tungsten
Data Source
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AI summary
Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.