Semiconductor Cleaning Solution for Cobalt-Copper Corrosion Control
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Solution Overview
Problem
Conventional cleaning solutions for semiconductor substrates with cobalt and copper layers fail to effectively prevent galvanic corrosion and thoroughly remove residues, as they do not adequately address the corrosion potential difference between these metals.
Innovation Solution
A cleaning solution comprising specific compounds such as hydrazine derivatives, borane complexes, and anticorrosive agents like imidazole and triazole ring-containing compounds, which reduce corrosion potential and enhance residue removal capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If conventional cleaning solutions are used, then residue removal is achieved, but galvanic corrosion increases due to corrosion potential difference between base metal and noble metal
Solution Approach 1:
The patent changes the chemical parameters of the cleaning solution by specifying precise pH ranges (7.0-10.5) and incorporating specific additives (corrosion inhibitors, chelating agents) to modify the electrochemical environment. This reduces the corrosion potential difference between cobalt and copper layers while maintaining effective residue removal capabilities.
Solution Approach 2:
The patent introduces intermediary substances including corrosion inhibitors and chelating agents that mediate between the cleaning solution and the metal layers. These intermediaries form protective complexes with metal ions and reduce direct corrosive interactions, thereby preventing galvanic corrosion while allowing effective cleaning.
2Object-generated harmful factors
If cleaning solution strength is increased to improve residue removal, then cleaning effectiveness improves, but corrosion risk increases
Solution Approach 1:
The patent optimizes pH within a specific range (7.0-10.5) to balance cleaning power and corrosion prevention. This parameter control ensures sufficient alkalinity for residue removal while avoiding excessive corrosion potential that would occur with stronger cleaning agents.
Solution Approach 2:
The cleaning solution employs a composite formulation combining multiple functional components: alkaline agents for cleaning, corrosion inhibitors for protection, and chelating agents for metal ion complexation. This composite approach achieves both effective residue removal and corrosion prevention simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses galvanic corrosion and ensures high-level residue removal, maintaining the integrity of semiconductor substrates with cobalt and copper layers.
Implementation Method 1
the corrosion potential difference between the base metal and the noble metal increases, and it is considered that galvanic corrosion and the like are likely to occur
Implementation Method 2
a cleaning solution with excellent anti-corrosion properties
Implementation Method 3
the substrate is cleaned to remove an impurity such as a shaving and the like adhering to the substrate
Data Source
AI summary
A cleaning solution, a method for cleaning a substrate, and a method for manufacturing a semiconductor. The cleaning solution includes at least one of a compound a1 represented by a general formula (a1), a salt of the compound (a1), a hydrate of the compound (a1), hydrogen iodide, borane, and a complex of the borane; an amine compound that has 4 or more carbon atoms and is not the compound a1, or a salt thereof; and an anticorrosive agent,in which R1 and R2 each independently represents an organic group that does not contain a carbonyl group, or a hydrogen atom.