Semiconductor Cleaning Fluid for Metal Impurity Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor manufacturing equipment used in lithography processes experiences defects due to metal impurities that are not removed by existing cleaning fluids, leading to reduced yield and quality of semiconductor devices.
Innovation Solution
A cleaning fluid comprising an inorganic acid, such as sulfuric acid, hydrochloric acid, or nitric acid, mixed with a hydrophilic organic solvent like 1-methoxy-2-propanol or 1-ethoxy-2-propanol, is used to effectively remove metal impurities from the equipment, preventing their transfer to semiconductor substrates during the lithography process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning fluids are used to clean semiconductor manufacturing equipment, then general cleaning is achieved, but metal impurities remain on pipes and filters
Solution Approach 1:
The cleaning fluid composition is changed by adding specific concentrations of inorganic acids (sulfuric acid 0.01-10%, hydrochloric acid 0.01-10%, or nitric acid 0.01-10%) to conventional organic solvents, transforming the chemical properties to enable metal impurity removal while maintaining general cleaning effectiveness
Solution Approach 2:
Inorganic acids act as intermediary substances that facilitate the removal of metal impurities from equipment surfaces. The acids chemically interact with metal contaminants, enabling their dissolution and removal without affecting the base cleaning fluid's general cleaning capability
2Ease of manufacture
If existing cleaning methods are used, then equipment maintenance is performed, but metal impurities are not removed, causing defects in semiconductor devices
Solution Approach 1:
The cleaning fluid's chemical composition parameters are modified by incorporating inorganic acids at optimized concentrations, enabling the fluid to simultaneously perform equipment maintenance and remove metal impurities that cause manufacturing defects
Solution Approach 2:
The cleaning fluid is applied to equipment pipes and filters before semiconductor manufacturing processes to preemptively remove metal impurities, preventing their transfer to substrates and subsequent defect formation during manufacturing
3Ease of operation
If cleaning fluids without inorganic acid are used, then equipment is cleaned, but metal impurities such as Al, Ca, Fe, and Ti remain, leading to cone defects and watermarks
Solution Approach 1:
The cleaning fluid formulation is enhanced by adding inorganic acids at controlled concentrations (0.01-10% each), maintaining operational simplicity while gaining the ability to remove specific metal impurities that cause cone defects and watermarks
Solution Approach 2:
Inorganic acids serve as intermediary agents that specifically target and remove metal impurities (Al, Ca, Fe, Ti) from equipment surfaces, preventing their transfer to semiconductor substrates and subsequent defect formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning fluid effectively ionizes and removes metal impurities from pipes and filters in semiconductor manufacturing equipment, reducing defects such as cone defects and watermarks, thereby improving the yield and quality of semiconductor devices.
Implementation Method 1
The cleaning fluid effectively ionizes and removes metal impurities from pipes and filters in semiconductor manufacturing equipment
Implementation Method 2
A cleaning fluid comprising an inorganic acid, such as sulfuric acid, hydrochloric acid, or nitric acid, mixed with a hydrophilic organic solvent like 1-methoxy-2-propanol or 1-ethoxy-2-propanol, is used to effectively remove metal impurities
Data Source
AI summary
[Problem] To provide a cleaning fluid for effectively removing metallic and other impurities, in semiconductor element production steps, that are present in the parts of a semiconductor production device through which a liquid chemical for lithography is to be passed in a lithography step, before the passing of the liquid chemical in order to prevent defects from occurring on the semiconductor substrate through resist pattern formation or through semiconductor substrate processing. [Solution] A cleaning fluid for cleaning the parts of a semiconductor production device through which a liquid chemical for lithography is to be passed in a lithography step in semiconductor production, the cleaning fluid comprising an inorganic acid, water, and a hydrophilic organic solvent. The concentration of the inorganic acid in the cleaning fluid is preferably 0.0001-60 mass% relative to the total amount of the cleaning fluid.