Semiconductor Cleaning via Inert Gas Flow
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Solution Overview
Problem
The increasing complexity of semiconductor device manufacturing due to the scaling-down process in the IC industry poses challenges in forming reliable semiconductor device structures with improved yield, particularly in cleaning and processing techniques.
Innovation Solution
A deposition apparatus with a cleaning chamber that uses a gas flow produced by a volatile cleaning substance, such as nitrogen, to clean the top surface of material layers without water, preventing reactions and improving the quality and yield of semiconductor device structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If water is used for cleaning material layers, then cleaning effectiveness is improved, but material reactions and quality degradation occur
Solution Approach 1:
The patent uses an inert gas (nitrogen or argon) to displace water from the cleaning environment. The gas flow system creates a water-free atmosphere that prevents material reactions while maintaining effective particle removal capability, thus resolving the contradiction between cleaning effectiveness and material stability
Solution Approach 2:
The patent replaces the chemical cleaning mechanism (water-based) with a physical cleaning mechanism (gas flow). The gas flow system uses mechanical force from flowing gas to remove particles without the chemical reactions that occur with water, thereby maintaining cleaning effectiveness while preventing material degradation
2Manufacturing precision
If conventional cleaning methods are used, then manufacturing process is simple, but particle removal and material protection are insufficient
Solution Approach 1:
The patent introduces gas flow as an intermediary medium between the cleaning source and the material layer. This intermediary carries the cleaning function while being inert to the materials, enabling effective particle removal without direct harmful interaction, thus improving cleaning quality without excessive complexity
Solution Approach 2:
The gas flow system serves multiple functions simultaneously: it removes particles, protects materials from reactions, and can be integrated with existing deposition apparatus. This multi-functionality achieves high manufacturing precision without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively cleans semiconductor device structures by removing particles and preventing material reactions, enhancing the quality and reliability of the semiconductor device structures and improving manufacturing yield.
Implementation Method 1
cleaning the top surface by producing a gas flow on the top surface
Data Source
AI summary
A method and apparatus for cleaning a semiconductor device structure are provided. The method includes providing a substrate, forming a material layer over the substrate. The material layer has a top surface. The method further includes cleaning the top surface of the material layer by producing a gas flow on the top surface.