Cleaning Composition for Semiconductor Organic Layer Residue Removal
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Solution Overview
Problem
The increasing integration density of semiconductor devices requires effective removal of organic residues from organic layers, which is challenging due to their weak adhesion and susceptibility to damage during cleaning processes, especially after polishing, where existing methods often result in peeling, delamination, or incomplete residue removal.
Innovation Solution
A cleaning composition comprising 0.01 to 5 wt. % hydroxide, deionized water, and optional organic solvents and amino acids, with a pH of 5 or higher, is used to effectively remove organic residues from semiconductor devices, minimizing damage and ensuring complete residue removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning methods are used to remove organic residues, then residue removal efficiency is improved, but the organic layer suffers from peeling, delamination, or damage
Solution Approach 1:
The patent changes the chemical parameters of the cleaning composition by specifying a pH range of 2-12 and particular hydroxide concentrations (0.01-5 wt%) to achieve effective organic residue removal while maintaining organic layer integrity. This parameter optimization resolves the contradiction between complete residue removal and layer integrity preservation.
Solution Approach 2:
The cleaning composition uses a composite formulation combining multiple hydroxide types (tetramethylammonium hydroxide, ammonium hydroxide, lithium hydroxide, sodium hydroxide, potassium hydroxide, rubidium hydroxide, or cesium hydroxide) with deionized water and optional organic solvents. This composite approach enables both effective residue removal and protection of the organic layer from damage.
2Productivity
If stronger cleaning agents are used to remove organic residues, then cleaning effectiveness is improved, but the risk of damaging the organic layer increases
Solution Approach 1:
The patent optimizes the concentration parameters of cleaning agents by limiting hydroxide content to 0.01-5 wt% and controlling pH within 2-12, achieving effective cleaning while minimizing damage risk to the organic layer.
Solution Approach 2:
The patent introduces deionized water as a benign intermediary carrier for the hydroxide cleaning agents, and optionally organic solvents as intermediaries that facilitate residue removal while being less aggressive than pure strong chemicals, thereby reducing damage to the organic layer.
3Reliability
If weak cleaning agents are used to preserve organic layer integrity, then layer integrity is maintained, but organic residue removal is incomplete
Solution Approach 1:
The patent employs a composite cleaning composition combining multiple hydroxide types with deionized water and optional organic solvents, creating a synergistic formulation that achieves both complete residue removal and organic layer integrity preservation, overcoming the limitations of single-agent weak cleaners.
Solution Approach 2:
The cleaning composition is designed to perform multiple functions simultaneously: removing organic residues, maintaining pH balance, and protecting the organic layer, making it universally effective for the intended application without requiring separate treatments.
4Shape
If polishing process is performed on organic layer, then surface flatness is improved, but organic residues are generated that are difficult to remove
Solution Approach 1:
The patent addresses the difficult-to-remove residues generated by polishing by optimizing the cleaning composition parameters, including pH control (2-12) and hydroxide concentration (0.01-5 wt%), which are specifically tuned to effectively remove polishing residues while protecting the organic layer.
Solution Approach 2:
The patent uses deionized water and optional organic solvents as intermediary substances that facilitate the removal of polishing residues without directly attacking the organic layer, enabling effective residue removal while maintaining layer integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning composition effectively removes organic residues without causing peeling or delamination, ensuring the integrity of the semiconductor device fabrication process and preventing process failures, as demonstrated by experimental results showing superior performance compared to comparative examples.
Implementation Method 1
The cleaning composition may further include 0.1 to 10 wt. % of an organic solvent based on a total weight of the cleaning composition
Implementation Method 2
A cleaning composition comprising 0.01 to 5 wt. % hydroxide, deionized water, and optional organic solvents and amino acids, with a pH of 5 or higher, is used to effectively remove organic residues
Data Source
AI summary
Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.