Semiconductor Cleaning Liquid Composition for CMP Residue Removal

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Solution Overview

Problem

Current cleaning liquids for semiconductor substrates after chemical mechanical polishing (CMP) struggle to achieve excellent cleaning performance and small surface roughness of metal films, leading to residual issues that can cause short-circuits and affect electrical characteristics.

Innovation Solution

A cleaning liquid composition comprising specific compounds like tris(2-hydroxyethyl)methylammonium hydroxide, primary and secondary amino alcohols, and a tertiary amine, formulated to enhance the cooperative action of its components for improved cleaning performance and surface smoothness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional cleaning liquids are used for CMP-treated semiconductor substrates, then the cleaning process can be performed, but residues remain on the metal film and surface roughness is high

Engineering Contradiction:

Improvecleaning performanceVSAvoidresidues on metal film

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the chemical composition parameters of the cleaning liquid by incorporating specific compounds (quaternary ammonium hydroxide, amino alcohols, and tertiary amines) in optimized ratios. This chemical parameter modification enables effective removal of CMP residues while maintaining low surface roughness, directly resolving the contradiction between cleaning performance and residue generation.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The cleaning liquid employs a composite formulation combining multiple functional components: quaternary ammonium hydroxide for primary cleaning action, amino alchols for enhanced residue removal, and tertiary amines for surface protection. This composite material approach achieves synergistic effects that simultaneously improve cleaning performance and minimize residues on the metal film.

Inventive Principle:

Principle #40Composite materials

2Ease of operation

If conventional cleaning liquids are used for CMP-treated semiconductor substrates, then the cleaning process can be performed, but surface roughness of the metal film remains large

Engineering Contradiction:

Improvecleaning processabilityVSAvoidsurface roughness of metal film

Core Design Contradiction:

Ease of operationVSManufacturing precision

Solution Approach 1:

The patent modifies the chemical parameters of the cleaning liquid by incorporating specific compounds (quaternary ammonium hydroxide, amino alcohols, and tertiary amines) in optimized ratios. This chemical parameter modification enables effective removal of CMP residues while maintaining low surface roughness, directly resolving the contradiction between cleaning performance and residue generation.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces mechanical cleaning approaches with a chemically-driven cleaning mechanism. The specialized cleaning liquid composition enables chemical dissolution and removal of residues without requiring aggressive mechanical action, thereby achieving low surface roughness while maintaining ease of operation.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Productivity

If residues remain on the metal film after CMP cleaning, then the cleaning process is simplified, but electrical characteristics are affected and short-circuits occur

Engineering Contradiction:

Improvecleaning efficiencyVSAvoidelectrical characteristics

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent converts the potentially harmful residues into removable substances through the specialized chemical formulation. The cleaning liquid components are designed to specifically target and dissolve CMP residues, transforming the harmful contamination into a controllable removal process that enhances both productivity and electrical reliability.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed cleaning liquid effectively removes residues and reduces surface roughness, ensuring better electrical characteristics and preventing short-circuits on semiconductor substrates post-CMP treatment.

Implementation Method 1

contains a quaternary ammonium hydroxide, an amine, and water

Methodology Applied

Scientific EffectBasicity:

Implementation Method 2

a primary amino alcohol having a primary amino group or a secondary amino group; a tertiary amine

Methodology Applied

Scientific EffectChelation:

Data Source

PatentUS20230145012A1Cleaning liquid for semiconductor substrate

Publication Date: 2023.05.11 FUJIFILM CORP

AI summary

There is provided a cleaning liquid for a semiconductor substrate, which has excellent cleaning performance with respect to a semiconductor substrate including a metal film after CMP and has a small surface roughness of a metal film after cleaning. The cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate, which is used for cleaning a semiconductor substrate, including a compound represented by Formula (1), a compound represented by Formula (2), a primary amino alcohol having a primary amino group or a secondary amino group, a tertiary amine; and a solvent.