Semiconductor Cleaning Liquid Composition for Post-CMP Defect Removal

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Solution Overview

Problem

Existing treatment liquids for semiconductor manufacturing, particularly those used on materials like polysilicon, silicon carbide, and silicon carbonitride, fail to effectively remove defects and residues after chemical mechanical polishing (CMP) treatments.

Innovation Solution

A treatment liquid comprising polycarboxylic acid and a polymer with a repeating unit derived from a nonionic monomer and an anionic group, specifically designed to enhance defect removability on these materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If existing treatment liquids are used for cleaning polysilicon, silicon carbide, or silicon carbonitride after CMP treatment, then the cleaning process can be performed, but defect removability on these materials is insufficient

Engineering Contradiction:

Improvedefect removabilityVSAvoidcleaning effectiveness

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the chemical composition parameters of the treatment liquid by incorporating specific polycarboxylic acids (citric acid, malic acid, tartaric acid) and controlling pH levels (2.0-10.0), which significantly improves defect removability on polysilicon, silicon carbide, and silicon carbonitride materials compared to conventional treatment liquids

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The treatment liquid uses a composite formulation combining polycarboxylic acid with specific polymers (polymer A and polymer B with defined molecular weights and structures), creating a synergistic effect that enhances cleaning performance and defect removal capability on semiconductor materials

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides excellent defect removability on polysilicon, silicon carbide, and silicon carbonitride, improving the cleaning efficiency and reducing residual impurities post-CMP treatments.

Implementation Method 1

a treatment liquid comprising: a polycarboxylic acid; and a polymer

Methodology Applied

Scientific EffectChelation:

Implementation Method 2

defect removability on the specific material is excellent

Methodology Applied

Scientific EffectChemical dissolution:

Data Source

PatentUS20250215361A1Treatment liquid for manufacturing semiconductor, cleaning method of object to be treated, and manufacturing method of semiconductor

Publication Date: 2025.07.03 FUJIFILM CORP

AI summary

The present invention provides a treatment liquid for manufacturing a semiconductor, in which, in a case where the treatment liquid is used for cleaning an object to be treated, containing at least one (specific material) selected from the group consisting of polysilicon, silicon carbide, and silicon carbonitride, defect removability on the specific material is excellent. The treatment liquid for manufacturing a semiconductor of the present invention contains a polycarboxylic acid and a polymer including a repeating unit A derived from a nonionic monomer and a repeating unit B having an anionic group.