Semiconductor Cleaning Liquid Composition for Post-CMP Organic Residues
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Solution Overview
Problem
Current cleaning liquids for semiconductor substrates after chemical mechanical polishing (CMP) treatments are inadequate in removing organic impurities, leading to potential short-circuits and electrical performance issues due to residual residues.
Innovation Solution
A cleaning liquid formulation containing specific compounds, such as those represented by Formula (A) with a group *—(R5—O)n—H, combined with quaternary ammonium compounds and anticorrosion agents like purine compounds, effectively adsorbs and removes organic impurities from semiconductor substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning liquids are used for cleaning semiconductor substrates after CMP treatment, then inorganic residues can be removed, but organic impurities remain on the substrate surface
Solution Approach 1:
The invention changes the chemical composition parameters of the cleaning liquid by incorporating specific quaternary ammonium compounds with hydrophilic groups (such as polyethylene oxide groups) that have enhanced affinity for organic impurities. This parameter change enables the cleaning liquid to effectively remove organic residues that conventional cleaners cannot eliminate, while maintaining compatibility with semiconductor substrate materials.
Solution Approach 2:
The invention creates a composite cleaning liquid formulation that combines quaternary ammonium compounds with specific hydrophilic groups, anticorrosion agents, and other auxiliary components. This composite approach leverages the synergistic effects of different components: the quaternary ammonium compounds provide organic impurity removal capability, while anticorrosion agents protect the substrate, and other components enhance overall cleaning performance without causing damage to the semiconductor substrate.
2Manufacturing precision
If strong cleaning agents are used to remove all residues, then cleaning performance improves, but damage to the semiconductor substrate and metal films increases
Solution Approach 1:
The invention adjusts the pH parameter and chemical composition of the cleaning liquid to achieve optimal cleaning performance. By controlling the pH within a specific range and selecting quaternary ammonium compounds with appropriate molecular weights and hydrophilic group configurations, the cleaning liquid achieves effective organic impurity removal while maintaining mildness toward the substrate and metal films, thus avoiding damage.
Solution Approach 2:
The invention uses a specially formulated cleaning liquid that is designed to be consumed in the cleaning process. The cleaning liquid contains components that can safely interact with and remove residues without damaging the substrate, and any excessive or harsh components are discarded after use, ensuring that the substrate is not exposed to prolonged harmful effects.
3Quantity of substance
If quaternary ammonium hydroxide is used as the cleaning agent, then some cleaning performance is achieved, but organic impurity removal is insufficient
Solution Approach 1:
The invention modifies the molecular structure parameters of quaternary ammonium compounds by introducing hydrophilic groups such as polyethylene oxide chains. This structural modification enhances the compound's ability to interact with and solubilize organic impurities, significantly improving organic impurity removal performance compared to conventional quaternary ammonium hydroxide while maintaining stable cleaning action.
Solution Approach 2:
The invention formulates a composite cleaning liquid that combines modified quaternary ammonium compounds with other functional components. This composite formulation synergistically enhances organic impurity removal capability while balancing overall cleaning performance, preventing substrate damage, and ensuring compatibility with subsequent processing steps in semiconductor manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning liquid demonstrates enhanced cleaning performance for organic impurities, ensuring improved electrical characteristics and reduced residue-related issues on semiconductor substrates post-CMP treatments.
Implementation Method 1
A cleaning liquid formulation containing specific compounds, such as those represented by Formula (A) with a group *—(R5—O)n—H, combined with quaternary ammonium compounds and anticorrosion agents like purine compounds, effectively adsorbs and removes organic impurities from semiconductor substrates.
Data Source
AI summary
An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which is excellent in cleaning performance of organic impurities, and a cleaning method for a semiconductor substrate. The cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate used for cleaning a semiconductor substrate, and includes a compound represented by Formula (A).


