Semiconductor Cleaning Composition for Stable Residue Removal
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Solution Overview
Problem
Current semiconductor cleaning compositions fail to effectively remove residues and prevent metal film corrosion over time, leading to increased defects in semiconductor substrates during the manufacturing process, especially after a predetermined period from production.
Innovation Solution
A composition comprising an antibacterial agent, an organic acid, an organic amine, and water, with a pH range of 4.0 to 9.0 and a water content of 70% or more, is used for cleaning semiconductor substrates after chemical mechanical polishing, which helps in suppressing residue release and reattachment, thereby reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a cleaning composition is used after a predetermined period from production, then the cleaning performance deteriorates and defects increase, but storing the composition for later use is necessary for production scheduling
Solution Approach 1:
The cleaning composition is prepared in advance with all necessary components (antibacterial agent, organic acid, organic amine) already combined and stabilized. This preliminary preparation ensures that when the composition is stored and later used, it maintains effective cleaning performance without deterioration, resolving the contradiction between advance preparation and performance stability.
Solution Approach 2:
The organic acid and organic amine act as intermediary substances that stabilize the cleaning composition during storage. These intermediaries prevent degradation of cleaning performance over time by maintaining chemical stability, allowing the composition to be stored for later use while preserving its effectiveness.
2Manufacturing precision
If the cleaning composition removes residues effectively, then cleaning performance improves, but metal film corrosion may occur
Solution Approach 1:
The pH of the cleaning composition is precisely controlled within the range of 4.0 to 9.0 by adjusting the balance between organic acid and organic amine content. This parameter optimization enables effective residue removal while preventing metal film corrosion, as the controlled pH avoids both overly aggressive cleaning and corrosive conditions.
Solution Approach 2:
The cleaning composition uses a composite formulation combining antibacterial agent, organic acid, organic amine, and water in specific proportions. This composite approach creates a balanced cleaning solution that achieves effective residue removal through multiple mechanisms while the organic acid and amine work together to prevent corrosion of metal films.
3Adaptability or versatility
If the pH range is expanded to cover strong acidity and strong alkalinity, then adaptability to new elements improves, but control of ionization balance becomes difficult
Solution Approach 1:
The invention optimizes the pH range to 4.0-9.0, which provides sufficient adaptability for various semiconductor elements and residues while maintaining controllable ionization balance. This parameter selection avoids the complexity of strong acids and bases while still achieving versatile cleaning performance across different materials.
Solution Approach 2:
The organic acid and organic amine components provide localized chemical actions at the cleaning interface, enabling effective cleaning of specific residues and metal films without requiring extreme pH values. This localized effectiveness achieves adaptability to new elements while maintaining simple ionization balance control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively reduces defects on semiconductor substrates by enhancing cleaning performance and preventing corrosion, even when used after a period of storage, by maintaining the balance of pH and ionization, thus ensuring improved electrical conductivity and residue removal.
Implementation Method 1
a composition comprising an antibacterial agent, an organic acid, an organic amine, and water, a content of the water is 70% by mass or more with respect to a total mass of the composition, and a pH at 25° C. is 4.0 to 9.0
Data Source
AI summary
The present invention provides a composition that suppresses the occurrence of defects in an object to be applied, even in a case of being used after a predetermined period of time has elapsed from the production. In addition, the present invention provides a manufacturing method for a semiconductor element and a cleaning method for a semiconductor substrate.The composition according to the present invention is a composition containing an antibacterial agent, an organic acid, an organic amine, and water, in which a content of the water is 70% by mass or more with respect to a total mass of the composition, and a pH at 25° C. is 4.0 to 9.0.