Semiconductor Cleaning Solution Prevents Metal Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor device manufacturing processes often leave contaminants on metal layers, which can reduce the reliability of the devices and cause damage during cleaning, as existing cleaning solutions may etch the metal layers.
Innovation Solution
A cleaning solution composition comprising an organic solvent in which metal fluoride does not dissolve, combined with a fluoride compound that generates bifluoride (HF2−) and deionized water, with specific concentration ranges to prevent metal layer etching and effectively remove contaminants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional cleaning solution is used to remove contaminants from metal layers, then cleaning effectiveness is improved, but metal layer damage increases
Solution Approach 1:
The patent changes the chemical parameters of the cleaning solution by using an organic solvent system (IPA-based) instead of conventional aqueous solutions, and carefully controlling the water content to 1.5 wt% or lower. This parameter change allows the solution to effectively remove contaminants while preventing metal fluoride dissolution that would damage the metal layer
Solution Approach 2:
The cleaning solution is formulated as a composite system containing multiple components: organic solvent (98.7-99.6 wt%), fluoride compound (0.002-0.05 wt%), and controlled water content (≤1.5 wt%). This composite formulation provides both cleaning effectiveness and metal layer protection by combining the benefits of organic solvents with controlled fluoride chemistry
2Reliability
If water content is increased in the cleaning solution to improve contaminant removal, then cleaning capability is enhanced, but metal fluoride dissolution increases causing damage
Solution Approach 1:
The patent precisely controls the water content parameter to 1.5 wt% or lower, which is the critical threshold that prevents metal fluoride dissolution while still allowing sufficient contaminant removal. This parameter optimization resolves the contradiction between cleaning capability and metal layer protection
3Productivity
If fluoride compound concentration is increased to enhance contaminant removal, then cleaning effectiveness is improved, but metal layer etching increases
Solution Approach 1:
The patent optimizes the fluoride compound concentration to a narrow range of 0.002-0.05 wt%, which provides sufficient contaminant removal efficiency while preventing excessive metal layer etching. This precise parameter control balances cleaning effectiveness with metal layer integrity
Solution Approach 2:
The fluoride compound is used in combination with the organic solvent system and controlled water content, creating a composite cleaning solution where the organic solvent dominates (98.7-99.6 wt%). This composite formulation reduces the aggressive etching effect while maintaining cleaning effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution prevents damage to metal layers and effectively removes contaminants, ensuring the reliability of semiconductor devices by controlling the etching process and maintaining the integrity of the metal layers during cleaning.
Implementation Method 1
at least one fluoride compound that generates bifluoride (HF2−)
Implementation Method 2
an organic solvent in which a metal fluoride does not dissolve
Data Source
AI summary
A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF2−), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.