Semiconductor Cleaning Composition for Selective Titanium Etching
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Solution Overview
Problem
Conventional cleaning compositions fail to efficiently remove etch residues and titanium compounds from semiconductor devices without causing corrosion to metal lines, etch stop layers, and dielectric layers.
Innovation Solution
A semiconductor cleaning composition comprising ammonium hydroxide, an organic solvent, and an etch stop layer corrosion inhibitor, with a specific weight ratio, is used to contact the semiconductor device, allowing for controlled etching rates of titanium and aluminum compositions, thereby minimizing corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional cleaning compositions are used to remove titanium compounds, then the removal efficiency is poor, but if stronger cleaning agents are used, then corrosion of metal lines, etch stop layers and dielectric layers occurs
Solution Approach 1:
The patent changes the chemical parameters of the cleaning composition by incorporating specific phosphonic acid derivatives as corrosion inhibitors and using ammonium hydroxide as a base, with controlled pH and weight ratios, to achieve high titanium removal efficiency while protecting aluminum and dielectric layers from corrosion
Solution Approach 2:
The cleaning composition uses a composite formulation combining ammonium hydroxide, organic solvents, phosphonic acid derivatives, and hydrogen peroxide in specific proportions to create a synergistic effect that enables selective removal of titanium compounds while protecting other semiconductor layers
2Speed
If the cleaning composition etches titanium composition rapidly, then cleaning efficiency is improved, but the etching of aluminum composition increases causing structural damage
Solution Approach 1:
The phosphonic acid derivatives act as intermediary corrosion inhibitors that selectively interact with aluminum ions to form protective complexes, preventing the cleaning composition from attacking aluminum layers while allowing rapid etching of titanium compounds
Solution Approach 2:
The patent optimizes the pH parameter and the weight ratio of ammonium hydroxide to phosphonic acid derivative to create a chemical environment that favors rapid titanium etching while suppressing aluminum dissolution through controlled complexation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves rapid removal of titanium compounds while maintaining minimal etching of aluminum and dielectric layers, enhancing the cleaning efficiency and reducing structural damage.
Implementation Method 1
an etching rate of the semiconductor cleaning composition for the titanium composition is not less than 170 Å/min
Implementation Method 2
The etch stop layer corrosion inhibitor is selected from a group consisting of (1-hydroxy-1-phosphonoethyl)phosphonic acid, nitrilotrimethylenetris(phosphonic acid), {ethane-1,2-diylbis[nitrilobis(methylene)]}tetrakis(phosphonic acid), [hexane-1,6-diylbis[nitrilobis(methylene)]]tetrakisphosphonic acid and [(bis{2-[bis(phosphonomethyl)amino]ethyl}amino)methyl]phosphonic acid
Implementation Method 3
A semiconductor cleaning composition includes a mixture and hydrogen peroxide
Data Source
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AI summary
A cleaning method of a semiconductor device includes the steps as follows. A semiconductor cleaning composition is provided, which includes a mixture and hydrogen peroxide. The semiconductor cleaning composition is contacted with a semiconductor device to clean the semiconductor device. The semiconductor device includes a titanium composition and an aluminum composition. The mixture includes ammonium hydroxide, an organic solvent and an etch stop layer corrosion inhibitor. A weight ratio of the ammonium hydroxide to the etch stop layer corrosion inhibitor is 1:1 to 20:1. An etching rate of the semiconductor cleaning composition for the titanium composition is not less than 170 Å/min, and an etching rate of the semiconductor cleaning composition for the aluminum composition is not greater than 1 Å/min.