Semiconductor Cleaning Solution for Dimension Control
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Solution Overview
Problem
Existing cleaning processes in semiconductor manufacturing result in critical dimension loss and damage to layers due to stringent cleanliness requirements, limiting the effectiveness of surface cleaning during the manufacturing process.
Innovation Solution
A method using a cleaning solution comprising tetra methyl ammonium hydroxide (TMAH) and hydrogen peroxide (H2O2) with a surfactant, applied in conjunction with UV irradiation and high-frequency ultrasonic/megasonic systems, to effectively remove contamination without etching sensitive films, thereby maintaining critical dimensions and reducing layer damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing cleaning processes are used to achieve stringent cleanliness requirements, then surface cleanliness is improved, but critical dimension loss and layer damage occur
Solution Approach 1:
The cleaning solution composition is changed by using a specific formulation with controlled pH (8-10) and containing surfactants, chelating agents, and oxidizing agents in defined concentrations. This parameter optimization allows effective contamination removal while minimizing etching of sensitive films and maintaining critical dimensions
Solution Approach 2:
A surfactant is introduced as an intermediary substance in the cleaning solution to enhance the removal of organic and inorganic contaminants. The surfactant acts as a mediator between the cleaning solution and contamination, enabling effective cleaning at milder conditions that protect layer integrity
2Productivity
If cleaning intensity is increased to remove contamination, then cleaning capability is improved, but etching of sensitive films increases
Solution Approach 1:
The cleaning solution uses a pH range of 8-10 which is sufficiently alkaline to remove contaminants but not so aggressive as to cause significant etching of sensitive films. The controlled concentration of oxidizing agents (0.1-5% H2O2) provides cleaning power while limiting material loss
Solution Approach 2:
The cleaning process applies a balanced level of cleaning action that is sufficient to remove contamination but deliberately limited to avoid excessive etching. The solution composition and processing conditions are optimized to achieve just enough cleaning effect without over-processing that would damage films
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances cleaning capability while minimizing layer corrosion and loss, allowing for improved critical dimensions and overlay control, reducing manufacturing costs and cycle time, and increasing production yields.
Implementation Method 1
performing a cleaning process using a cleaning solution to clean a top surface of the structure. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O)
Implementation Method 2
The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O)
Implementation Method 3
A method using a cleaning solution comprising tetra methyl ammonium hydroxide (TMAH) and hydrogen peroxide (H2O2) with a surfactant
Data Source
AI summary
A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming a pattern on the surface layer. The method further includes performing a cleaning process using a cleaning solution to clean a top surface of the substrate. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O).