Semiconductor Cleaning Composition for Selective Tungsten Oxide Removal
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Solution Overview
Problem
Current semiconductor substrate cleaning compositions fail to effectively remove tungsten oxide, leading to reduced performance and increased manufacturing costs due to low removal rates and uneven etching, which complicates the production of small-sized high-performance semiconductor devices.
Innovation Solution
A composition comprising an oxidizing agent, a fluorine compound, a metallic tungsten corrosion inhibitor, and a tungsten oxide etching accelerator is used to selectively etch titanium and titanium alloys while suppressing the etching of metallic tungsten, enhancing the removal rate of tungsten oxide and maintaining high Ti/W etching selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning compositions are used to selectively etch titanium and titanium alloys, then Ti/W etching selectivity is maintained, but tungsten oxide removal rate is low and etching is uneven
Solution Approach 1:
The patent modifies the chemical composition parameters of the cleaning solution by adding a tungsten oxide etching accelerator (D) to the existing oxidizing agent (A), fluorine compound (B), and metallic tungsten corrosion inhibitor (C). This parameter change enables the solution to effectively remove tungsten oxide while maintaining selective etching of titanium and titanium alloys, resolving the contradiction between removal rate and etching uniformity
Solution Approach 2:
The patent creates a composite cleaning composition that combines multiple functional components: oxidizing agent for titanium etching, fluorine compound for enhanced etching, metallic tungsten corrosion inhibitor for protection, and tungsten oxide etching accelerator for oxide removal. This composite formulation achieves both high removal rate and uniform etching by synergistic action of its components
2Manufacturing precision
If additional tungsten oxide removal step is added to the manufacturing process, then tungsten oxide can be effectively removed, but manufacturing process becomes complicated and costs increase
Solution Approach 1:
The patent merges the tungsten oxide removal function with the existing selective etching step by incorporating a tungsten oxide etching accelerator into the cleaning composition. This allows both titanium etching and tungsten oxide removal to be performed in a single integrated process step, eliminating the need for separate removal steps and reducing manufacturing complexity
Solution Approach 2:
The cleaning composition achieves multi-functionality by simultaneously performing multiple tasks: selective etching of titanium and titanium alloys, removal of tungsten oxide, and protection of metallic tungsten. This universal composition replaces what would otherwise require multiple specialized process steps, simplifying the manufacturing process while improving efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a high removal rate of tungsten oxide with high Ti/W etching selectivity, improving semiconductor substrate performance and production efficiency by ensuring efficient removal of tungsten oxide without damaging metallic tungsten.
Implementation Method 1
the composition is characterized by containing at least one oxidizing agent, at least one etching solution, and at least one solvent
Implementation Method 2
the composition is characterized by containing at least one oxidizing agent, at least one etching solution, and at least one solvent
Data Source
AI summary
Provided is a composition for cleaning semiconductor substrates, having high removal rate of tungsten oxide with high Ti/W etching selectivity.The composition for cleaning semiconductor substrates, comprising an oxidizing agent (A), a fluorine compound (B), a metallic tungsten corrosion inhibiter (C), and a tungsten oxide etching accelerator (D), wherein the addition ratio of the oxidizing agent (A) is from 0.0001 to 10% by mass relative to the total mass of the composition for cleaning semiconductor substrates; the addition ratio of the fluorine compound (B) is from 0.005 to 10% by mass relative to the total mass of the composition for cleaning semiconductor substrates; and the addition ratio of the metallic tungsten corrosion inhibiter (C) is from 0.0001 to 5% by mass relative to the total mass of the composition for cleaning semiconductor substrates.