Semiconductor Cleave Plane Formation With Ion Damage Repair
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Solution Overview
Problem
Conventional semiconductor substrate thinning methods like mechanical backgrinding introduce high mechanical stress and thickness variation, and existing ion implantation techniques for cleaving cause damage to modern, complex, and sensitive device structures, particularly in vertical transistors with smaller feature sizes.
Innovation Solution
A method involving ion implantation through circuit layers to form a cleave plane, followed by repairing damage with a hydrogen gas mixture at controlled temperatures, and stacking semiconductor substrates, utilizing high-energy protons to define cleave planes while minimizing damage to dielectric and conductive structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If mechanical backgrinding is used for substrate thinning, then substrate thickness can be reduced, but high mechanical stress and substantial thickness variation are introduced
Solution Approach 1:
The patent replaces the mechanical backgrinding process with ion implantation to create a cleave plane for substrate separation. Instead of using mechanical abrasion that causes stress and thickness variation, the invention uses ion implantation to form a controlled cleavage plane that allows precise substrate thinning without mechanical contact, thereby eliminating the associated stress and thickness variation problems
Solution Approach 2:
The patent changes the physical and chemical parameters of the substrate by implanting ions at controlled energies and doses to create a cleave plane at a specific depth. By adjusting ion implantation parameters (energy, dose, angle), the cleave plane location and substrate thinning characteristics can be precisely controlled, achieving uniform thickness without mechanical stress
2Ease of manufacture
If ion implantation is used for substrate cleaving, then substrate separation can be achieved, but damage is caused to device structures such as channel regions
Solution Approach 1:
The patent applies local quality by selectively protecting certain device regions while allowing ion implantation in other areas. Blocking structures are placed selectively over sensitive device regions (such as channel regions) to prevent ion damage, while allowing ion implantation to proceed in regions where cleaving is needed. This selective protection approach maintains device operability while achieving substrate separation
Solution Approach 2:
The patent introduces blocking structures as intermediary elements between the ion beam and sensitive device structures. These blocking structures (such as deposited layers or existing device features) act as shields that intercept ions before they can damage critical device regions, thereby protecting device reliability while still allowing the ion implantation process to create the cleave plane in unprotected areas
3Productivity
If structures are made smaller to increase device density, then more devices can be integrated, but they become more sensitive to ion damage
Solution Approach 1:
The patent applies local quality by selectively protecting certain device regions while allowing ion implantation in other areas. Blocking structures are placed selectively over sensitive device regions (such as channel regions) to prevent ion damage, while allowing ion implantation to proceed in regions where cleving is needed. This selective protection approach maintains device operability while achieving substrate separation
Solution Approach 2:
The patent applies preliminary anti-action by pre-positioning blocking structures before ion implantation to prevent damage to sensitive device regions. These blocking structures are deposited or formed in advance to shield critical areas from incoming ions, thereby preventing potential damage before it can occur. This proactive protection enables safe ion implantation for substrate separation even in high-density devices with sensitive structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces total thickness variation to 4% or less, enables efficient stacking and interconnection of heterogeneous layers with increased signal bandwidth and system functionality, and protects sensitive structures from ion damage.
Implementation Method 1
implanting ions through the circuit layer and into the first substrate to form a cleave plane
Implementation Method 2
exposing the semiconductor substrate to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions
Data Source
AI summary
Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused by ion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure.