Semiconductor Clip Structure with Tilted Downset for Adhesion
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Solution Overview
Problem
The existing semiconductor packages with wire bonding suffer from low signal transfer rates, increased electrical resistance, and space requirements, particularly in power semiconductor applications like MOSFETs and IGBTs, where high energy efficiency and reduced heat dissipation are critical.
Innovation Solution
A semiconductor package with a clip structure that includes a lead frame, a semiconductor chip, and a clip structure with a downset and adhesion layer, where the downset is bent at a non-right angle to create trap regions for adhesion material, enhancing electrical and thermal performance by replacing wire bonding with a clip connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonding is used to connect the semiconductor chip to the lead frame, then electrical connection is achieved, but signal transfer rate is low and electrical property deteriorates
Solution Approach 1:
The patent replaces the wire bonding mechanical system with a clip structure that provides direct mechanical and electrical connection between the semiconductor chip and lead frame, eliminating the need for wire bonds and thereby improving signal transfer rate and electrical property
Solution Approach 2:
The clip structure serves as an intermediary component between the semiconductor chip and lead frame, providing both mechanical support and electrical connection without requiring wire bonds, thus resolving the contradiction between connection reliability and signal transfer speed
2Adaptability or versatility
If a larger number of wires are used for electrical connection, then more connection points are achieved, but installation space requirement increases
Solution Approach 1:
The patent merges the functions of multiple wire bonds into a single clip structure that can connect to multiple pads simultaneously, reducing the number of separate components needed and thereby decreasing installation space requirement while maintaining multiple connection points
3Reliability
If wire bonding is performed on the pad of the semiconductor chip, then electrical connection is established, but package height must increase
Solution Approach 1:
The patent replaces wire bonding with a clip structure that makes direct contact with the chip pads, eliminating the need for wire bonding overhead space and thereby reducing package height while maintaining electrical connection reliability
4Productivity
If power semiconductor elements are used with wire bonding, then device functionality is achieved, but switching loss and conduction loss increase
Solution Approach 1:
The patent replaces wire bonding with a clip structure that provides lower resistance electrical connection, reducing both switching loss and conduction loss in power semiconductor elements while maintaining full device functionality
Solution Approach 2:
The patent changes the electrical resistance parameter by using a clip structure with better conductive properties compared to wire bonds, thereby reducing energy loss in the form of switching loss and conduction loss
5Reliability
If wire bonding is used for electrical connection, then connection is achieved, but heat dissipation is insufficient
Solution Approach 1:
The patent replaces wire bonding with a clip structure that provides both electrical connection and thermal conduction path, allowing heat to dissipate more effectively from the semiconductor chip through the clip to the lead frame
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The clip structure improves adhesion reliability between the lead frame and the semiconductor chip, reducing electrical deterioration and enhancing energy efficiency and heat dissipation in semiconductor packages.
Implementation Method 1
an adhesion layer disposed between the lead and the second end of the downset to allow adhesion therebetween
Data Source
AI summary
A semiconductor package comprise a downset has a first end coupled to a connection portion and a second opposite end electrically coupled to a lead of a lead frame; and an adhesion layer disposed between the lead and the second end of the downset to allow adhesion therebeween; wherein the downset is bent in a non-right angle at the first end thereof such that a bottom face of the second end of the downset is tilted toward a top face of the lead and thus a first side of both sides of the bottom face is closer to the top face of the lead than a second side opposite the first side, wherein a first trap region is defined between a side face of the second end at the first side and the top face of the lead to trap therein an adhesion material of the adhesion layer, wherein a second trap region is defined between the bottom face of the second end and the top face of the lead to trap therein an adhesion material of the adhesion layer.