Semiconductor Clip Interconnection for Heat Dissipation
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Solution Overview
Problem
Power semiconductor die packages face challenges such as heat dissipation, incompatibility with certain package types, complex and costly clip connections, and limited die size due to the exposed source pad structure.
Innovation Solution
A semiconductor die package design featuring a leadframe structure with a dual gauge clip structure and protruding portion, allowing for efficient heat dissipation and compatibility with various package types, along with a simplified and cost-effective clip interconnection process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional drain clip structure is used to connect to the drain lead, then the connection can be achieved, but the structure becomes complex and costly due to bending and alignment requirements
Solution Approach 1:
The clip structure is divided into distinct functional segments: a body portion that provides the connection interface, a protruding portion that extends through the molding material, and a drain lead connection portion. This segmentation allows each part to be optimized independently for its specific function, simplifying the overall manufacturing process while reducing structural complexity.
Solution Approach 2:
The clip structure utilizes the vertical dimension by extending the protruding portion through the molding material to connect with the drain lead. This dimensional approach eliminates the need for complex lateral bending and alignment operations, as the connection is established through straightforward vertical positioning during the molding process.
2Adaptability or versatility
If the bottom of the semiconductor die package has an exposed source pad structure, then the connection can be made, but it becomes incompatible with MLP and S08 types of packages
Solution Approach 1:
The package bottom structure is designed with a molded recess that can accommodate different die configurations and package types (MLP, S08, and others). The recess provides a universal interface that adapts to various bottom-terminal configurations, eliminating the incompatibility issues caused by exposed source pads while maintaining functionality across different package standards.
3Area of moving object
If the source die attach pad area is limited, then the package size is constrained, but this limits the size of dies that can be used
Solution Approach 1:
The die attach pad is extended into the vertical dimension by creating a recess in the molding material at the bottom of the package. This allows the attach pad to occupy three-dimensional space rather than being constrained to a two-dimensional surface, effectively increasing the available attachment area and enabling accommodation of larger dies without increasing the package footprint.
4Reliability
If power semiconductor die packages are designed for effective connection, then heat dissipation becomes insufficient
Solution Approach 1:
The protruding portion of the clip structure serves as a thermal intermediary, conducting heat from the semiconductor die through the molding material to the drain lead. This intermediary structure provides a dedicated thermal pathway that enhances heat dissipation capability while maintaining the electrical connection integrity, addressing both reliability and thermal management requirements.
Data Source
AI summary
A semiconductor die package. The semiconductor die package includes a leadframe structure comprising a first lead structure comprising a die attach pad, a second lead structure, and a third lead structure. It also includes a semiconductor die comprising a first surface and a second surface. The semiconductor die is on the die attach pad of the leadframe structure. The first surface is proximate the die attach pad. The semiconductor die package further includes a clip structure comprising a first interconnect structure and a second interconnect structure, the first interconnect structure comprising a planar portion and a protruding portion, the protruding portion including an exterior surface and side surfaces defining the exterior surface. The protruding portion extends from the planar portion of the first interconnect structure. The second surface of the semiconductor die is proximate to the clip structure, and a molding material covers at least the semiconductor die and at least a portion of the side surfaces of the protruding portion.