Semiconductor Clip Junction Layout for Uniform Solder Current Paths

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Solution Overview

Problem

The uneven arrangement of solder between the clip and the metal plating layer in semiconductor devices leads to an inclined junction, causing potential failure and uneven current paths.

Innovation Solution

The metal plating layer is partitioned by an insulating layer to create a divided junction region, ensuring the clip is joined in parallel with the second electrode, thereby reducing solder unevenness and preventing crack propagation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If solder is used to join the clip and the metal plating layer, then the electrical connection is established, but the solder becomes unevenly arranged causing inclined clip junction

Engineering Contradiction:
Improveelectrical connection stabilityVSAvoidclip junction parallelism
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The metal plating layer is divided into multiple independent plating regions (first plating region and second plating region) separated by an insulating layer. This segmentation prevents solder from flowing between regions during the joining process, ensuring uniform solder distribution and parallel clip junction without compromising electrical connection reliability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulating layer is introduced as an intermediary between the first and second plating regions. This insulating layer acts as a barrier that controls solder flow during the joining process, preventing uneven solder arrangement while allowing the clip to join parallel to the metal plating layer through the divided junction regions.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If the metal plating layer is not partitioned, then the manufacturing process is simple, but the solder arrangement becomes uneven leading to inclined junction

Engineering Contradiction:
Improveprocess simplicityVSAvoidsolder arrangement uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The metal plating layer is segmented into multiple plating regions by the insulating layer, which simplifies the soldering process by confining solder to specific regions. This segmentation ensures uniform solder arrangement in each region while maintaining overall manufacturing simplicity through the straightforward layer structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the metal plating layer are treated differently by introducing the insulating layer between them. This creates local quality differences where each plating region can be independently controlled for solder deposition, ensuring uniform solder arrangement in each local area while maintaining overall process simplicity.

Inventive Principle:
Principle #3Local quality

3Device complexity

If the clip joins the metal plating layer in a single region, then the structure is simple, but current paths become uneven causing overheating

Engineering Contradiction:
Improvejunction structure complexityVSAvoidcurrent path uniformity
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The metal plating layer is segmented into multiple plating regions that can be joined to different portions of the clip. This segmentation creates multiple parallel current paths through the solder joints, distributing current flow evenly and preventing overheating while maintaining relatively simple junction structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulating layer introduces a vertical dimension to the plating structure, allowing multiple plating regions to be stacked or arranged in different spatial configurations. This dimensional change enables multiple current paths without significantly increasing horizontal structure complexity, ensuring uniform current distribution.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250273616A1Semiconductor device and method for manufacturing semiconductor device
Publication Date: 2025.08.28 RENESAS ELECTRONICS CORP
  • US20250273616A1 patent drawing
  • US20250273616A1 patent drawing
  • US20250273616A1 patent drawing

AI summary

A semiconductor device is provided, the semiconductor device including: a first electrode; an N-type semiconductor layer arranged on the first electrode; a P-type semiconductor layer arranged on the N-type semiconductor layer; a first insulating layer surrounding and partitioning a first region in plan view, arranged on the P-type semiconductor layer; a second electrode arranged on the P-type semiconductor layer; a second insulating layer arranged on the first insulating layer surrounding and partitioning the first region in plan view on the second electrode; a metal plating layer arranged on the second electrode; a solder layer arranged on the metal plating layer; and a clip arranged on the solder layer, and the first region is a region where the clip is joined with the metal plating layer.