CMP Slurry Iron Oxidizer for Semiconductor Conductive Features
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in forming reliable devices at increasingly smaller sizes, where the complexity of processing and manufacturing increases due to decreasing feature sizes, leading to difficulties in achieving reliable electrical connections without damaging conductive features.
Innovation Solution
A method involving the formation of conductive features over a semiconductor substrate, where a conductive material is selectively grown or formed without a barrier layer, and a CMP process with an iron-containing oxidizer is used to oxidize a portion of the conductive material, creating a protective oxide layer that prevents slurry damage to underlying features, enhancing adhesion and reducing electrical resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are decreased to increase functional density, then production efficiency is improved and costs are lowered, but manufacturing complexity increases and reliability of electrical connections deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the slurry by incorporating iron-containing oxidizers alongside traditional CMP abrasives. This parameter modification enables the slurry to perform dual functions: mechanical planarization and chemical oxidation of conductive materials, thereby protecting electrical connections while maintaining productivity benefits of scaling
Solution Approach 2:
The iron-containing oxidizer acts as an intermediary substance that mediates between the slurry and conductive features. It selectively oxidizes conductive materials to form protective oxide layers, preventing direct damage from the slurry while enabling continued CMP processing at reduced feature sizes
2Device complexity
If conductive material is formed without a barrier layer to reduce manufacturing steps, then device complexity is reduced, but the conductive material becomes susceptible to damage from slurry during CMP processes
Solution Approach 1:
The iron-containing oxidizer serves as a chemical intermediary that creates a protective oxide layer on conductive materials during CMP. This intermediary mechanism protects the conductive features from slurry damage without requiring an additional barrier layer, thus reducing manufacturing complexity while eliminating harmful effects
Solution Approach 2:
The patent converts the potentially harmful slurry contact into a beneficial process by using the iron-containing oxidizer to transform the slurry's chemical environment. The oxidizer converts conductive material surfaces into protective oxide layers, turning what would be damaging exposure into a protective treatment
3Manufacturing precision
If CMP slurry is used for planarization, then surface flatness is improved, but the slurry may damage underlying conductive features
Solution Approach 1:
The iron-containing oxidizer converts the harmful slurry into a beneficial chemical treatment. During CMP, the oxidizer selectively oxidizes conductive materials to form protective oxide layers, transforming the slurry from a damaging agent into a protective treatment that simultaneously enables planarization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability and quality of conductive features by preventing slurry damage and enhancing electrical connections, ensuring the integrity of semiconductor devices at smaller scales.
Implementation Method 1
A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material
Implementation Method 2
thinning the conductive material using a chemical mechanical polishing process
Implementation Method 3
enhancing adhesion and reducing electrical resistance
Data Source
AI summary
A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.