Surface Treatment Composition for Semiconductor CMP Residue Removal
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Solution Overview
Problem
Current washing solutions for semiconductor substrates after chemical mechanical polishing (CMP) struggle to effectively remove ceria residues and organic residues, leading to potential electrical property degradation and reliability issues in semiconductor devices.
Innovation Solution
A surface treatment composition comprising a carboxy group-containing polymer, a SOx or NOy partial structure-containing compound, and a dispersing medium, with a pH of 1 or more and 8 or less, which improves the dispersibility and removal of ceria and organic residues by forming complexes and enhancing repulsion mechanisms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sulfuric acid and hydrogen peroxide solution are used to remove ceria residues, then ceria particle residues can be removed, but the process complexity and environmental load increase
Solution Approach 1:
The invention merges the functions of removing metal impurities, abrasive grains, ceria residues, and organic residues into a single washing solution formulation. This eliminates the need for separate treatment steps using sulfuric acid and hydrogen peroxide, simplifying the process while maintaining effective ceria removal through the synergistic action of the polymer and surfactant.
2Ease of operation
If conventional washing solutions are used, then the washing process is simple, but organic residues on the polished substrate cannot be sufficiently removed
Solution Approach 1:
The invention introduces a surfactant (polyoxyethylene alkyl ether or alkyl phenyl ether) as an intermediary substance that facilitates the removal of organic residues. The surfactant acts as a mediator between the water-soluble polymer and organic contaminants, enabling effective removal while maintaining the simplicity of the washing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly reduces ceria and organic residues on polished semiconductor substrates, enhancing the electrical properties and reliability of semiconductor devices by effectively removing these contaminants.
Implementation Method 1
a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group
Implementation Method 2
a SOx or NOy partial structure-containing compound having a partial structure represented by SOx or NOy
Data Source
AI summary
The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria.The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SOx or NOy partial structure-containing compound having a partial structure represented by SOx or NOy (where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.