Semiconductor Coating Composition for Formic Acid-Free Selective Films

The patent changes the chemical composition parameters by replacing formic acid with alternative pH adjusters (acetic acid, propionic acid, or sulfamic acid) while adjusting their concentrations to achieve the desired pH range. This substitution maintains the selective coating formation capability on SiO2 without using restricted deleterious substances, thus resolving the contradiction between reliability and harmful factors.

The patent employs readily available, non-restricted chemical substances (acetic acid, propionic acid, sulfamic acid) that can be easily disposed of after use, replacing the restricted formic acid. These substitute chemicals are environmentally friendlier and not designated as deleterious substances, allowing industrialization while maintaining coating effectiveness.

The patent achieves local quality by formulating a composition that selectively coats only the SiO2 insulating layer surface while excluding the copper wiring surfaces. The diallylamine-based polymer and pH adjuster create chemical selectivity based on surface properties, allowing the coating to form locally where needed (on SiO2) and not where it interferes with electrical connection (on copper wiring).

The patent uses a specifically designed organic composition containing diallylamine-based polymer and pH adjuster as an intermediary that mediates between the copper wiring and SiO2 insulating layer. This intermediary coating selectively adheres to SiO2, preventing metal diffusion into the insulating layer while being removable from copper wiring surfaces to maintain electrical connection.