Semiconductor Interconnect Coil Structure for Precise Node Patterning
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Solution Overview
Problem
The semiconductor manufacturing process faces challenges in precise control of element formation as the industry advances to smaller technology nodes, requiring improved methods for forming conductive structures within semiconductor devices.
Innovation Solution
A method involving the formation of a conductive coil in an interconnection structure, followed by a passivation layer, conductive layer deposition, and precise patterning to create a conductive material with controlled thickness, and subsequent oxide layer formation for electrical isolation and measurement of induced current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing methods are used for semiconductor devices, then existing device density and performance can be achieved, but precise control of element formation becomes difficult at smaller technology nodes
Solution Approach 1:
The manufacturing process is divided into distinct stages performed in separate chambers: depositing material layers, forming mandrels, forming sacrificial structures, and forming conductive structures. This segmentation allows each stage to be optimized independently for precision while managing overall process complexity.
Solution Approach 2:
Mandrels are formed in advance before the conductive structures are created. These preliminary mandrel structures serve as templates that guide the subsequent formation of conductive structures with precise dimensions and positions, enabling better control at smaller technology nodes.
2Manufacturing precision
If material layers are deposited and patterned using conventional lithography, then circuit components can be formed, but control precision deteriorates at advanced technology process nodes
Solution Approach 1:
Sacrificial structures are introduced as intermediary elements during the manufacturing process. These sacrificial structures are formed between the mandrels and the final conductive structures, enabling precise positioning and dimension control. The sacrificial structures are later removed, leaving behind precisely formed conductive structures with controlled gaps and dimensions.
3Productivity
If device density is increased to achieve higher performance, then smaller technology nodes are required, but manufacturing control becomes more challenging
Solution Approach 1:
The patent applies different material properties and structural characteristics to different regions of the device. Conductive structures are formed with specific materials and dimensions in particular locations, while sacrificial structures provide local support and positioning. This local differentiation enables precise control of element formation while maintaining high device density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control of conductive structures within semiconductor devices, enhancing manufacturing precision and performance in advanced technology nodes.
Implementation Method 1
An induced current generated in the conductive coil by the Eddy currents can be detected and measured
Implementation Method 2
Eddy currents can be generated in the one or more isolated portions/pieces by an exciting coil
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a first conductive pad, a second conductive pad, a conductive material and a conductive coil. The first and second conductive pads are disposed over and electrically connected to the interconnection structure individually. The conductive material is electrically isolated from the interconnection structure. Bottom surfaces of the conductive material, the first conductive pad and the second conductive pad are substantially aligned. The conductive coil is disposed in the interconnection structure and overlapped by the conductive material. A manufacturing method of a semiconductor structure is also provided.