Semiconductor Doping via Cold and Hot Implantation
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Solution Overview
Problem
As transistors continue to be scaled down, there is a need to improve their on-current and restrain short-channel effects while maintaining performance in an industrial environment.
Innovation Solution
A method involving the use of cold and hot temperature implantations to form specific doping profiles in semiconductor devices, including the creation of source/drain extended regions and halo regions with broadened and suppressed doping profiles, respectively, to enhance transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistors are scaled down to improve integration density, then productivity increases, but short-channel effects worsen and on-current decreases
Solution Approach 1:
The patent applies different doping temperatures (cold implantation at -200°C to 0°C for halo regions, hot implantation at 50°C to 500°C for source/drain regions) to different spatial zones within the transistor structure. This local quality differentiation allows the halo region to suppress short-channel effects while the source/drain region maintains low resistance, resolving the contradiction between scaling down and maintaining reliability.
Solution Approach 2:
The patent changes the temperature parameter during doping processes to achieve different doping profiles. Cold temperature implantation creates a suppressed doping profile for halo regions to restrain short-channel effects, while hot temperature implantation creates a broadened doping profile for source/drain regions to improve on-current. This parameter change approach enables simultaneous optimization of both reliability and productivity.
2Reliability
If cold temperature implantation is used to form halo regions, then short-channel effect control improves, but manufacturing complexity increases
Solution Approach 1:
The patent utilizes temperature parameter changes during implantation to achieve different doping profiles. By adjusting the temperature parameter (cold for halo, hot for source/drain), the process controls dopant diffusion and achieves the desired doping profiles. This parameter-based approach, while adding process steps, provides precise control over device characteristics, resolving the contradiction between reliability improvement and manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves on-current and reduces gate-induced drain leakage without deteriorating short-channel margins, leading to better transistor performance and operation in scaled-down industrial environments.
Implementation Method 1
implanting a first species into a substrate at a cold temperature to form a first region
Implementation Method 2
implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region
Implementation Method 3
The cold temperature is in the range of approximately −200° C. to approximately 0° C., and the hot temperature is in the range of approximately 50° C. to approximately 500° C.
Data Source
AI summary
A method for fabricating a semiconductor device includes: implanting a first species into a substrate at a cold temperature to form a first region; and implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region.