Semiconductor Column Growth via Angled Beam Deposition
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Solution Overview
Problem
Current semiconductor device fabrication methods face challenges in precisely controlling the angle and direction of semiconductor column growth, which affects the electrical performance and efficiency of transistors.
Innovation Solution
The method involves forming dielectric pillars and trenches on a substrate with specific angles and dimensions, and using source material beams applied at specific angles to control the growth of semiconductor columns, allowing for precise orientation and direction of growth by rotating the substrate during deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication methods are used to form semiconductor columns, then the manufacturing process is simple, but the angle and direction of column growth cannot be precisely controlled
Solution Approach 1:
Dielectric pillars and trenches are formed in advance with specific geometric configurations before semiconductor column deposition. These pre-formed structures serve as templates that guide and constrain the subsequent column growth, ensuring precise angular and directional control without requiring complex real-time adjustments during the deposition process.
Solution Approach 2:
Dielectric pillars and trenches act as intermediary structures between the substrate and the semiconductor columns. These intermediaries provide physical constraints and geometric guidance that direct the column growth orientation, enabling precise control while keeping the overall fabrication approach relatively simple and modular.
2Reliability
If semiconductor columns are formed without precise angular control, then the fabrication process is faster, but the electrical performance of transistors deteriorates
Solution Approach 1:
The dielectric pillars and trenches are prepared in advance with predetermined angles and dimensions that correspond to the desired semiconductor column orientations. This preliminary setup eliminates the need for time-consuming adjustments or multiple deposition steps, achieving both high precision and efficient fabrication in a streamlined sequence.
Solution Approach 2:
The pre-formed dielectric structures automatically guide the semiconductor column growth orientation through their geometric configuration. The system self-regulates the column angle and direction based on the physical constraints provided by the dielectric pillars and trenches, eliminating the need for external control mechanisms or complex process adjustments during deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor columns at desired angles, enhancing the electrical performance of transistors by controlling current flow through the channel region, improving the 'on' and 'off' states of the transistor.
Implementation Method 1
using source material beams applied at specific angles to control the growth of semiconductor columns
Data Source
AI summary
Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.