Semiconductor Columnar Portions With Tapered Widths
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Solution Overview
Problem
In three-dimensional semiconductor memory devices, the insulator used to divide electrode layers often contacts the columnar portions, leading to defects and reduced integration density due to the difficulty in arranging the insulator without contacting the columnar portions, and the existing joint structures are complex, causing defects or waste.
Innovation Solution
The semiconductor device design features columnar portions with diameters that decrease in the Z-direction, allowing the embedded insulator to be easily positioned without contact, and a simpler joint structure that prevents defects, increasing integration density by arranging columnar portions in a two-dimensional array.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulator is arranged to divide electrode layers in conventional three-dimensional semiconductor memory, then the electrode layers are properly divided, but the insulator contacts the columnar portions causing defects and reduced integration density
Solution Approach 1:
The patent introduces a horizontal dimension to the columnar portion structure by forming an upper columnar portion with a larger diameter than the lower columnar portion. This dimensional change in the horizontal plane creates sufficient clearance between the insulator and the columnar portions, allowing the insulator to divide electrode layers without contact while maintaining high integration density through optimized spatial arrangement.
2Stability of the object's composition
If conventional joint structures are used to connect substrates, then substrate connection is achieved, but the complex structure causes defects and waste
Solution Approach 1:
The patent divides the joint structure into separate functional components: a protrusion formed on one substrate and a corresponding recess formed on the other substrate. This segmentation allows for simpler, more reliable connection without complex multi-component joints, reducing both structural complexity and potential defect sources while maintaining stable substrate connection.
Data Source
AI summary
In one embodiment, a semiconductor device includes first electrode layers spaced from one another in a first direction, and second electrode layers provided above the first electrode layers, and spaced from one another in the first direction. The device further includes a first columnar portion extending in the first direction in the first electrode layers, and including a first semiconductor layer, and a second columnar portion provided on the first columnar portion, extending in the first direction in the second electrode layers, and including a second semiconductor layer. The first columnar portion includes a first portion having a first width, and a second portion having a second width larger than the first width above the first portion. The second columnar portion includes a third portion having a third width, and a fourth portion having a fourth width larger than the third width above the third portion.