Semiconductor Package Comb-Type Conductive Layers
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Solution Overview
Problem
Miniaturized semiconductor devices face challenges with signal distortion, power supply voltage drop (IR drop), and noise issues due to tiny metal wires transferring large electrical currents, which complicates manufacturing and affects performance.
Innovation Solution
A semiconductor package design featuring comb-type conductive layers interdigitated over the semiconductor chip, connected via adhesive layers, to provide stable electrical connections with lower resistance, addressing IR drop and noise issues by distributing power and ground connections efficiently across the chip.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If tiny metal wires are used to transfer signals in miniaturized semiconductor devices, then the device size is reduced and integration density is increased, but signal distortion, power supply voltage drop (IR drop), and noise problems occur
Solution Approach 1:
The patent divides the connection structure into multiple segments: substrate connection pads, comb-type conductive layers with multiple teeth, and chip connection pads. This segmentation distributes the current path across multiple parallel routes, reducing current density in each individual path and thereby minimizing IR drop and signal distortion while maintaining miniaturization
Solution Approach 2:
The patent transitions from traditional planar wire connections to three-dimensional comb-type conductive structures. The comb configuration extends the connection in multiple dimensions with interdigitated teeth that provide multiple parallel current paths, effectively increasing the conductive cross-section without increasing the footprint area, thus reducing resistance and IR drop
2Reliability
If more connection pads and comb-type conductive layers are added to reduce IR drop and noise, then electrical connection quality improves, but manufacturing complexity increases
Solution Approach 1:
The patent merges multiple functions into the comb-type conductive layer structure: it serves as both the power/ground connection pathway and provides mechanical support for the chip. The interdigitated comb teeth simultaneously create multiple parallel electrical paths and distribute mechanical stress, achieving enhanced electrical performance without proportionally increasing manufacturing steps
Solution Approach 2:
The comb-type conductive layers perform multiple functions: they provide low-resistance power and ground connections, distribute mechanical stress from the chip, and serve as structural support. This multi-functionality reduces the need for additional dedicated components, thereby limiting the increase in manufacturing complexity while improving electrical connection quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The comb-type conductive layers effectively prevent IR drop and noise interference, ensuring stable signal transmission and reducing electronic magnetic interference and electrostatic discharge, thereby enhancing the performance and reliability of miniaturized semiconductor devices.
Implementation Method 1
A first comb-type conductive layer and a second comb-type conductive layer are disposed over the first region, and a third comb-type conductive layer and a fourth comb-type conductive layer are disposed over the second region. A plurality of first wirings and fifth wirings are respectively connected to the first connection pads and the fifth connection pads with the first comb-type conductive layer.
Implementation Method 2
The comb-type conductive layers are connected via adhesive layers
Data Source
AI summary
A semiconductor package includes a substrate and a semiconductor chip disposed thereon. The substrate includes first and second connection pads adjacent to a first edge of the semiconductor chip, and third and fourth connection pads adjacent to a second edge opposite to the first edge. The semiconductor chip includes fifth and sixth connection pads in a first region close to the first edge, and seventh and eighth connection pads in a second region close to the second edge. A first and a second comb-type conductive layer are further disposed over the first region, and respectively connected to the first and fifth connection pads, and the second and sixth connection pads via wirings. A third and a fourth comb-type conductive layer are further disposed over the second region, and respectively connected to the fourth and eighth connection pads, and the third and seventh connection pads via wirings.