Semiconductor Component With Selectively Grown Epitaxial Trenches
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Solution Overview
Problem
Semiconductor components like Schottky diodes and JFETs face limitations in breakdown voltage, with existing methods increasing forward voltage and decreasing switching speed, making them unsuitable for high-voltage applications while maintaining low forward voltage and fast switching characteristics.
Innovation Solution
The implementation of vertical and horizontal charge balancing in semiconductor components through the formation of trenches in the epitaxial layer with selectively grown epitaxial layers of opposite conductivity type, creating a superjunction effect that increases breakdown voltage and reduces on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If techniques for increasing breakdown voltage are applied to Schottky diodes, then breakdown voltage is improved, but forward voltage increases and switching speed decreases
Solution Approach 1:
The patent segments the epitaxial layer into multiple regions with different conductivity types (N-type and P-type regions) to create a superjunction structure. This segmentation allows the device to achieve high breakdown voltage through charge balancing between adjacent regions while maintaining low forward voltage by providing multiple parallel conduction paths, thus resolving the contradiction between breakdown voltage and forward voltage.
Solution Approach 2:
The patent employs a composite structure combining N-type and P-type epitaxial regions within the same semiconductor device. This composite material approach creates a superjunction effect where the alternating conductivity types provide both high voltage blocking capability through charge balancing and low resistance conduction paths, simultaneously improving breakdown voltage while maintaining low forward voltage.
2Strength
If techniques for increasing breakdown voltage are applied to Schottky diodes, then breakdown voltage is improved, but switching speed decreases
Solution Approach 1:
The segmented superjunction structure provides multiple independent conduction channels that can operate in parallel. This segmentation enables fast switching by allowing current to transition quickly between multiple paths while the charge-balanced structure maintains high breakdown voltage, thus resolving the contradiction between switching speed and breakdown voltage.
Solution Approach 2:
The patent optimizes parameters such as the width, doping concentration, and depth of the alternating N-type and P-type regions to achieve charge balancing. By carefully controlling these parameters, the device achieves both high breakdown voltage through charge balancing and fast switching through optimized carrier transport properties in the segmented structure.
3Strength
If selectively grown epitaxial layers are formed in trenches to create superjunction effect, then breakdown voltage increases to over 700 volts, but device complexity increases
Solution Approach 1:
The patent uses a systematic segmentation approach where trenches are formed at regular intervals and filled with selectively grown epitaxial layers of opposite conductivity type. This repetitive segmented pattern, while structurally complex, follows a standardized manufacturing process that makes the complexity manageable and scalable, achieving over 700 volts breakdown voltage through the superjunction effect.
Solution Approach 2:
The patent achieves high breakdown voltage by precisely controlling parameters such as trench depth, epitaxial layer thickness, and doping concentrations. By optimizing these parameters to achieve charge balancing, the device reaches over 700 volts breakdown voltage. The parameter optimization process, while complex, follows established semiconductor manufacturing techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances breakdown voltage to over 700 volts while maintaining low forward voltage drops and fast switching speeds, achieving efficient and time-efficient manufacturing compatible with existing processes.
Implementation Method 1
The implementation of vertical and horizontal charge balancing in semiconductor components through the formation of trenches in the epitaxial layer with selectively grown epitaxial layers of opposite conductivity type, creating a superjunction effect that increases breakdown voltage and reduces on-resistance.
Data Source
AI summary
A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate.