Semiconductor Composite Device Bonding via Metal Oxide Layer
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Solution Overview
Problem
Conventional semiconductor devices, such as LED chips, face challenges in achieving reliable bonding between semiconductor thin films and metal surfaces due to differences in hydrophobicity, which affects the effectiveness of Van der Waals forces-based bonding methods.
Innovation Solution
A semiconductor composite apparatus is developed with a metal surface containing an oxide layer of elements like Pd, Ni, Ge, Pt, Ti, or Au, where a metal layer is formed on the semiconductor thin film and a corresponding oxide layer is formed on the substrate, allowing for intimate contact and strong bonding through Van der Waals forces, facilitated by a thin metal oxide layer that makes the metal surface hydrophilic.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If Van der Waals forces-based bonding is used to bond semiconductor thin film to metal surface, then bonding can be achieved between different substrate types, but bonding reliability is poor due to hydrophobicity differences between metal surfaces and semiconductor surfaces
Solution Approach 1:
A metal oxide layer is introduced as an intermediary between the metal surface and semiconductor thin film. This oxide layer acts as a mediator that modifies the surface properties, making the metal surface hydrophilic to match the semiconductor surface characteristics, thereby enabling reliable Van der Waals bonding between incompatible surfaces.
Solution Approach 2:
The surface energy parameters of the metal surface are changed by forming a metal oxide layer. This transformation alters the hydrophobicity of the metal surface, changing it from hydrophobic to hydrophilic, which enables effective Van der Waals bonding with the semiconductor thin film surface.
2Ease of manufacture
If metal surfaces are used directly for bonding, then bonding process is simple, but bonding strength is insufficient due to hydrophobicity preventing effective Van der Waals forces
Solution Approach 1:
The metal oxide layer is formed on the metal surface before bonding to the semiconductor thin film. This preliminary action modifies the surface properties in advance, ensuring that when bonding occurs, the surfaces have compatible hydrophilic characteristics that enable strong Van der Waals forces.
Solution Approach 2:
The metal oxide layer serves as an intermediary that enhances bonding strength by creating a hydrophilic surface on the metal. This intermediary layer facilitates effective molecular interactions between the metal and semiconductor surfaces, significantly improving bonding strength.
3Reliability
If oxide layer is added to metal surface to improve bonding, then bonding reliability improves, but device structure becomes more complex
Solution Approach 1:
The metal oxide layer is applied locally only at the bonding interface between the metal surface and semiconductor thin film. This localized modification improves bonding reliability at the critical interface without requiring oxide layers throughout the entire device structure, thereby minimizing added complexity.
Solution Approach 2:
A composite structure is created at the bonding interface consisting of metal and metal oxide layers. This composite material approach combines the advantages of both materials: the metal provides structural integrity while the oxide layer provides surface compatibility for bonding, achieving high reliability with minimal structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides reliable bonding with low resistance electrical contact and minimizes voids, enhancing the bonding strength and efficiency between semiconductor thin films and metal layers, suitable for various substrates including Si and other materials.
Implementation Method 1
bonding method may be conveniently employed which utilizes Van der Waals forces that act between atoms or molecules of the semiconductor thin film and the substrate of the different type from the thin film semiconductor
Implementation Method 2
surfaces of the semiconductor thin film and substrate are made hydrophilic and are then placed together so that the surfaces are bonded to each other due to hydrogen bonding
Data Source
AI summary
A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a metal that forms the metal surface. The metal surface is a surface of a metal layer provided on the substrate. The metal surface contains an element selected from the group consisting of Pd, Ni, Ge, Pt, Ti, Cr, and Au. The metal surface is coated with either a Pd layer or an Ni layer.